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MTK6589 даташит

Функция этой детали – «Hspa+ Smartphone ApplICation Processor».



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Номер в каталоге Производители Описание PDF
MTK6589 MediaTek
MediaTek
  HSPA+ Smartphone Application Processor

FO R M ch ED un IA pin T g.m EK iao CO @ NF nb ID bs E w. NT co IA m L US EO N MT6589 HSPA+ Smartphone Application Processor Technical Brief Version: Release date: 0.2 2012-09-26 © 2011 - 2012 MediaTek Inc. This document contains information that is proprietary to MediaTek Inc. Unauthorized reproduction or disclosure of this information in whole or in part is strictly prohibited. Specifications are subject to change without notice. Free Datasheet http:/// [email protected],time=2012-11
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Это результат поиска, начинающийся с "6589", "MTK6"

Номер в каталоге Производители Описание PDF
1165892 Multicomp
Multicomp

High power NPN silicon power transistors

1165892 High power NPN silicon power transistors. These devices are designed for linear amplifiers, series pass regulators, and inductive switching applications. Features: • Forward biased second breakdown current capability IS/b = 2.5 A dc at VCE = 60V dc. • Pb-free package
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1165899 Multicomp
Multicomp

High power NPN silicon transistors

1165899 TO-3 High power NPN silicon transistors. Features: • High voltage capability. • High current capability. • Fast switching speed. Applications: Switch mode power supplies. Flyback and forward single transistor low power converters. Description: The BUX48/A silicon m
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2N6589 SSDI
SSDI

NPN Transistor

10 AMP NPN(continued) Sorted by IC, then VCEO Part Number mIaCx (A) mVCaExO (V) Ratings based on 25˚C case temperature unless otherwise specified mhFiEn mhaFEx @Ic (A) VmCEa(sxat) (V) @(A)IC mfTin (MHz) mPaTx *TC=100°C (W) Package 2N1904 10 100 20 60 Note 1 1 No
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BA6589K ROHM Semiconductor
ROHM Semiconductor

Read/Write Amplifier for FDD

w w a D . w S a t e e h U 4 t m o .c w w .D w t a S a e h U 4 t e .c m o w w w .D a S a t e e h U 4 t m o .c
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BGA6589 NXP Semiconductors
NXP Semiconductors

MMIC wideband medium power amplifier

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 BGA6589 MMIC wideband medium power amplifier Product specification 2003 Sep 19 Philips Semiconductors Product specification MMIC wideband medium power amplifier FEATURES • Broadband 50 Ω gain block • 20 dBm o
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F6589 Hamamatsu Corporation
Hamamatsu Corporation

ULTRA THIN MCP ASSEMBLY WITH CENTER HOLE

ULTRA THIN MCP ASSEMBLY WITH CENTER HOLE F6589 FEATURES q Ultra Thin Type: 2.5 mm (Max.) • Detection at closed distance from samples q Flexible Lead Out (polymide film) • Easy system design with a flexible wiring • Low outguessing for high vacuum operation q Light Weight
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Последние обновления

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Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

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NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

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