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PDF NCE2302B Data sheet ( Hoja de datos )

Número de pieza NCE2302B
Descripción N-Channel Enhancement Mode Power MOSFET
Fabricantes NCE Power Semiconductor 
Logotipo NCE Power Semiconductor Logotipo



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No Preview Available ! NCE2302B Hoja de datos, Descripción, Manual

http://www.ncepower.com
Pb Free Product
NCE2302B
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE2302B uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as a
Battery protection or in other Switching application.
General Features
VDS = 20V,ID = 3.3A
RDS(ON) < 60m@ VGS=2.5V
RDS(ON) < 45m@ VGS=4.5V
High power and current handing capability
Lead free product is acquired
Surface mount package
Schematic diagram
Marking and pin assignment
Application
Battery protection
Load switch
Power management
SOT-23 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
2302B
NCE2302B
SOT-23
Reel Size
Ø180mm
Tape width
8 mm
Quantity
3000 units
Absolute Maximum Ratings (TA=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
Drain Current-Pulsed (Note 1)
ID
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
20
±12
3.3
16
0.9
-55 To 150
Unit
V
V
A
A
W
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
139 /W
Electrical Characteristics (TA=25unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
BVDSS
IDSS
VGS=0V ID=250μA
VDS=20V,VGS=0V
Min Typ Max Unit
20 22
--
-
1
V
μA
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
v1.0

1 page




NCE2302B pdf
http://www.ncepower.com
Pb Free Product
NCE2302B
Vds Drain-Source Voltage (V)
Figure 13 Safe Operation Area
Square Wave Pluse Duration(sec)
Figure 14 Normalized Maximum Transient Thermal Impedance
Wuxi NCE Power Semiconductor Co., Ltd
Page 5
v1.0

5 Page










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