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PDF 1SS370 Data sheet ( Hoja de datos )
| Número de pieza | 1SS370 | |
| Descripción | DIODE (HIGH VOLTAGE/ HIGH SPEED SWITCHING APPLICATIONS) | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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TOSHIBA Diode Silicon Epitaxial Planar Type
1SS370
High Voltage, High Speed Switching Applications
z Low forward voltage
: VF (2) = 0.9V (typ.)
z Fast reverse recovery time : trr = 60ns (typ.)
z Small total capacitance : CT = 1.5pF (typ.)
z Small package
: SC-70
1SS370
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
Reverse voltage
Maximum (peak) forward current
Average forward current
Surge current (10ms)
Power dissipation
Junction temperature
Storage temperature range
VRM
VR
IFM
IO
IFSM
P
Tj
Tstg
250
200
300
100
2
100
125
−55∼125
V
V
mA
mA
A
mW JEDEC
―
JEITA
°C TOSHIBA
SC−70
1-2P1D
°C Weight: 0.006g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Reverse recovery time
Symbol
VF (1)
VF (2)
IR (1)
IR (2)
CT
trr
Test
Circuit
Test Condition
― IF = 10mA
― IF = 100mA
― VR = 50V
― VR = 200V
― VR = 0, f = 1MHz
― IF = 10mA, Fig.1
Min Typ. Max Unit
― 0.72 1.0
― 0.90 1.2
V
― ― 0.1
― ― 1.0 μA
― 1.5 3.0 pF
― 10 60 ns
1 2007-11-01
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 1SS370.PDF ] | |
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