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PDF Si5856DC Data sheet ( Hoja de datos )
| Número de pieza | Si5856DC | |
| Descripción | N-Channel 1.8 V (G-S) MOSFET | |
| Fabricantes | Vishay | |
| Logotipo |  |
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Si5856DC
Vishay Siliconix
N-Channel 1.8 V (G-S) MOSFET with Schottky Diode
MOSFET PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.040 at VGS = 4.5 V
20 0.045 at VGS = 2.5 V
0.052 at VGS = 1.8 V
ID (A)
5.9
5.6
5.2
SCHOTTKY PRODUCT SUMMARY
VKA (V)
20
Vf (V)
Diode Forward Voltage
0.375 V at 1.0 A
IF (A)
1.0
1206-8 ChipFET®
1
A
KA
KS
DG
D
Marking Code
JD XXX
Lot Traceability
and Date Code
Part # Code
Bottom View
Ordering Information: Si5856DC-T1-E3 (Lead (Pb)-free)
Si5856DC-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFETs
• Ultra Low RDS(on)
• Ultra Low VF Schottky
• Si5853DC Pin Compatible
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Buck Rectifier Switch, Buck-Boost
• Synchronous Rectifier or Load
• Switch for Portable Devices
D
K
G
S
N-Channel MOSFET
A
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
5s
Steady State
Unit
Drain-Source Voltage (MOSFET and Schottky)
VDS 20
Reverse Voltage (Schottky)
VKA 20
V
Gate-Source Voltage (MOSFET)
VGS ± 8
Continuous Drain Current (TJ = 150 °C) (MOSFET)a
TA = 25 °C
TA = 85 °C
ID
5.9
4.2
4.4
3.1
Pulsed Drain Current (MOSFET)
Continuous Source Current (MOSFET Diode Conduction)a
IDM 20
IS 1.8
0.9
A
Average Forward Current (Schottky)
IF 1.0
Pulsed Forward Current (Schottky)
IFM 7
Maximum Power Dissipation (MOSFET)a
Maximum Power Dissipation (Schottky)a
TA = 25 °C
TA = 85 °C
TA = 25 °C
TA = 85 °C
PD
2.1
1.1
1.9
1.0
1.1
0.6
W
1.1
0.56
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)b, c
TJ, Tstg
- 55 to 150
260
°C
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. See reliability manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result
of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure
adequate bottom side solder interconnection.
c. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 72234
S10-0548-Rev. D, 08-Mar-10
www.vishay.com
1
1 page  
MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
1
Duty Cycle = 0.5
Si5856DC
Vishay Siliconix
0.2
0.1
0.1
0.05
0.02
0.01
10-4
Single Pulse
10-3
2
1
Duty Cycle = 0.5
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 90 °C/W
3. T JM - TA = PDMZthJA(t)
4. Surface Mounted
10-2
10-1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
100
600
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
1
SCHOTTKY TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100 10
10
1
0.1 20 V
10 V
0.01
TJ = 150 °C
1
0.001
10
TJ = 25 °C
0.0001
- 50 - 25 0 25 50 75 100 125 150
TJ - Junction Temperature (°C)
Reverse Current vs. Junction Temperature
0.1
0.0
0.1 0.2 0.3 0.4 0.5
VF - Forward Voltage Drop (V)
Forward Voltage Drop
0.6
Document Number: 72234
S10-0548-Rev. D, 08-Mar-10
www.vishay.com
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet Si5856DC.PDF ] | |
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