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PDF STI300N4F6 Data sheet ( Hoja de datos )
| Número de pieza | STI300N4F6 | |
| Descripción | N-channel Power MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STI300N4F6
N-channel 40 V, 1.7 mΩ typ., 160 A, STripFET™ VI DeepGATE™
Power MOSFET in a I²PAK package
Datasheet — production data
Features
Order code
STI300N4F6
VDS
40 V
RDS(on) max
ID
2.2 mΩ
160 A(1)
1. Limited by wire bonding
■ Standard level VGS(th)
■ 100% avalanche rated
Applications
■ Automotive switching applications
Description
This device is an N-channel Power MOSFET
developed using the 6th generation of STripFET™
DeepGATE™ technology, with a new gate
structure. The resulting Power MOSFET exhibits
the lowest RDS(on) in all packages.
123
I²PAK
Figure 1. Internal schematic diagram
D (TAB or 2)
G(1)
Table 1. Device summary
Order code
STI300N4F6
Marking
300N4F6
Package
I²PAK
S(3)
AM01474v1
Packaging
Tube
February 2013
This is information on a product in full production.
Doc ID 18062 Rev 2
1/13
www.st.com
13
1 page  
STI300N4F6
Electrical characteristics
Table 7. Source drain diode
Symbol
Parameter
Test conditions
ISD
ISDM(1)
VSD(2)
trr
Qrr
IRRM
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 160 A, VGS = 0
ISD = 160 A,
di/dt = 100 A/µs,
VDD= 32 V, TJ = 25 °C
(see Figure 15)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300 µs, duty cycle 1.5%
Min. Typ. Max Unit
- - 160 A
- - 640 A
- 1.1 V
58.7
- 99.2
3.38
ns
nC
A
Doc ID 18062 Rev 2
5/13
5 Page 
STI300N4F6
Figure 19. I²PAK (TO-262) drawing
Package mechanical data
0004982_Rev_H
Doc ID 18062 Rev 2
11/13
11 Page | ||
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| PDF Descargar | [ Datasheet STI300N4F6.PDF ] | |
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