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Número de pieza | SVF10N65F | |
Descripción | 650V N-CHANNEL MOSFET | |
Fabricantes | Silan Microelectronics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de SVF10N65F (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! SVF10N65T/F_Datasheet
10A, 650V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVF10N65T/F is an N-channel enhancement mode power
MOS field effect transistor which is produced using Silan
proprietary F-CellTM structure VDMOS technology. The
improved planar stripe cell and the improved guard ring
terminal have been especially tailored to minimize on-state
resistance, provide superior switching performance, and
withstand high energy pulse in the avalanche and commutation
mode.
These devices are widely used in AC-DC power suppliers, DC-
DC converters and H-bridge PWM motor drivers.
FEATURES
∗ 10A,650V,RDS(on)(typ.)=0.80Ω@VGS=10V
∗ Low gate charge
∗ Low Crss
∗ Fast switching
∗ Improved dv/dt capability
NOMENCLATURE
ORDERING INFORMATION
Part No.
SVF10N65T
SVF10N65F
Package
TO-220-3L
TO-220F-3L
Marking
SVF10N65T
SVF10N65F
Material
Pb free
Pb free
Packing
Tube
Tube
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.1
2011.01.26
Page 1 of 8
1 page SVF10N65T/F_Datasheet
TYPICAL CHARACTERISTICS(continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.2
1.1
1.0
0.9
0.8
-100
Notes:
1. VGS=0V
2. ID=250µA
-50 0 50 100 150 200
Junction Temperature – TJ(°C)
Figure 8. On-resistance Variation
3.0 vs. Temperature
2.5
2.0
1.5
1.0
0.5
0.0
-100
Notes:
1. VGS=10V
2. ID=5.0A
-50 0 50 100 150 200
Junction Temperature – TJ(°C)
Figure 9-1. Max. Safe Operating
102 Area(SVF10N65T)
101
100
10-1
10-2
100
100µs
1ms
10ms
DC
Operation in This Area is
Limited by RDS(ON)
Notes:
1.TC=25°C
2.Tj=150°C
3.Single Pulse
101 102
Drain Source Voltage - VDS(V)
103
Figure 10. Maximum Drain Current vs.
Case Temperature
10
8
6
4
Figure 9-2. Max. Safe Operating
Area(SVF10N65F)
102
101
100
10-1
10-2
100
100µs
1ms
10ms
DC
Operation in This Area is
Limited by RDS(ON)
Notes:
1.TC=25°C
2.Tj=150°C
3.Single Pulse
101 102
Drain Source Voltage - VDS(V)
103
2
0
25 50 75 100 125 150
Case Temperature – TC(°C)
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.1
2011.01.26
Page 5 of 8
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet SVF10N65F.PDF ] |
Número de pieza | Descripción | Fabricantes |
SVF10N65F | 650V N-CHANNEL MOSFET | Silan Microelectronics |
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