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PDF AUIRFR3504 Data sheet ( Hoja de datos )
| Número de pieza | AUIRFR3504 | |
| Descripción | HEXFET Power MOSFET | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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Features
l Advanced Planar Technology
l Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Repetitive Avalanche Allowed
up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified*
AUTOMOTIVE GRADE
PD - 97687A
AUIRFR3504
HEXFET® Power MOSFET
D V(BR)DSS
40V
RDS(on) typ.
7.8mΩ
jG
max
9.2mΩ
ID (Silicon Limited)
87A
S ID (Package Limited)
56A
Description
Specifically designed for Automotive applications,
this Stripe Planar design of HEXFET® Power
MOSFETs utilizes the latest processing techniques
to achieve low on-resistance per silicon area. This
benefit combined with the fast switching speed and
ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in Automotive and a wide variety of other applications.
G
Gate
D
S
G
D-Pak
AUIRFR3504
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
Max.
87j
61j
Units
A
ID @ TC = 25°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V (Package Limited)
cPulsed Drain Current
Power Dissipation
Linear Derating Factor
56
350
140
0.92
W
W/°C
VGS
EAS
EAS (tested )
IAR
EAR
Gate-to-Source Voltage
dSingle Pulse Avalanche Energy (Thermally Limited)
iSingle Pulse Avalanche Energy Tested Value
cAvalanche Current
cRepetitive Avalanche Energy
± 20
240
480
See Fig. 12a, 12b, 15, 16
V
mJ
A
mJ
TJ Operating Junction and
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case )
Thermal Resistance
300
°C
Parameter
lRθJC
Junction-to-Case
kRθJA Junction-to-Ambient (PCB Mount)
RθJA Junction-to-Ambient
Typ.
–––
–––
–––
Max.
1.09
50
110
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
08/30/11
1 page  
AUIRFR3504
100000
10000
1000
100
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
Crss
10
1
10
VDS, Drain-to-Source Voltage (V)
100
12 ID = 30A
10
VDS = 32V
VDS = 20V
VDS = 8V
8
6
4
2
0
0 10 20 30 40
QG, Total Gate Charge (nC)
50
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
TJ = 175 ° C
10
TJ= 25 ° C
1
0.1
0.0
0.5 1.0 1.5 2.0
V SD,Source-to-Drain Voltage (V)
V GS = 0 V
2.5
3.0
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
100μsec
10 1msec
Tc = 25°C
Tj = 175°C
Single Pulse
1
1 10
10msec
100
VDS, Drain-to-Source Voltage (V)
1000
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
Fig 8. Maximum Safe Operating Area
5
5 Page 
AUIRFR3504
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR TRR TRL
16.3 ( .641 )
15.7 ( .619 )
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
FEED DIRECTION
8.1 ( .318 )
7.9 ( .312 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
FEED DIRECTION
13 INCH
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
16 mm
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
www.irf.com
11
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet AUIRFR3504.PDF ] | |
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