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Número de pieza | AP2112 | |
Descripción | 600mA CMOS LDO REGULATOR | |
Fabricantes | BCD | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de AP2112 (archivo pdf) en la parte inferior de esta página. Total 21 Páginas | ||
No Preview Available ! Data Sheet
600mA CMOS LDO REGULATOR WITH ENABLE
AP2112
General Description
The AP2112 is CMOS process low dropout linear
regulator with enable function, the regulator delivers
a guaranteed 600mA (min.) continuous load current.
The AP2112 provides 1.2V, 1.8V, 2.5V, 2.6V, 2.8V
and 3.3V regulated output and 0.8V to 5V adjustable
output, and provides excellent output accuracy ±1.5%,
also provides an excellent load regulation, line
regulation and excellent load transient performance
due to very fast loop response. The AP2112 has
built-in auto discharge function.
The regulator features low power consumption, and
provides SOT-23-5, SOT-89-5, and SOIC-8 packages.
Features
• Output Voltage Accuracy: ±1.5%
• Output Current: 600mA (Min.)
• Foldback Short Current Protection: 50mA
• Enable Function to Turn ON/OFF VOUT
• Low Dropout Voltage (3.3V): 250mV (Typ.)
@IOUT=600mA
• Excellent Load Regulation: 0.2%/A (Typ.)
• Excellent Line Regulation: 0.02%/V (Typ.)
• Low Quiescent Current: 55μA (Typ.)
• Low Standby Current: 0.01μA (Typ.)
• Low Output Noise: 50μVRMS
• PSRR: 100Hz -65dB, 1kHz -65dB
• OTSD Protection
• Stable with 1.0μF Flexible Cap: Ceramic,
Tantalum and Aluminum Electrolytic
• Operation Temperature Range: -40°C to 85°C
• ESD: MM 400V, HBM 4000V
Applications
• Laptop Computer
• Portable DVD
• LCD Monitor
SOT-23-5
SOT-89-5
SOIC-8 (Option 1)
SOIC-8 (Option 2)
Mar. 2013 Rev. 2. 0
Figure 1. Package Types of AP2112
BCD Semiconductor Manufacturing Limited
1
1 page 600mA CMOS LDO REGULATOR WITH ENABLE
Absolute Maximum Ratings (Note 1)
Data Sheet
AP2112
Parameter
Power Supply Voltage
Operating Junction Temperature
Range
Storage temperature Range
Lead Temperature
(Soldering, 10 Seconds)
Symbol
VCC
TJ
TSTG
TLEAD
Thermal Resistance
(Junction to Ambient)(No Heatsink)
θJA
ESD (Machine Model)
ESD (Human Body Model)
Value
6.5
150
-65 to 150
260
SOT-23-5
SOIC-8
SOT-89-5
400
4000
184
114
120
Unit
V
ºC
ºC
ºC
°C /W
V
V
Note 1: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to
the device. These are stress ratings only, and functional operation of the device at these or any other conditions
beyond those indicated under “Recommended Operating Conditions” is not implied. Exposure to “Absolute
Maximum Ratings” for extended periods may affect device reliability.
Recommended Operating Conditions
Parameter
Supply Voltage
Ambient Operation
Range
Temperature
Symbol
VIN
TA
Min
2.5
-40
Max
6.0
85
Unit
V
°C
Mar. 2013 Rev. 2. 0
BCD Semiconductor Manufacturing Limited
5
5 Page Data Sheet
600mA CMOS LDO REGULATOR WITH ENABLE
AP2112
Electrical Characteristics (Continued)
AP2112-3.3 Electrical Characteristic (Note 2)
VIN=4.3V, CIN=1.0μF (Ceramic), COUT=1.0μF (Ceramic), Typical TA=25°C, unless otherwise specified (Note 3).
Parameter
Symbol
Test Conditions
Min Typ Max
Output Voltage
Maximum Output Current
Load Regulation
Line Regulation
VOUT
IOUT(MAX)
(△VOUT/VOUT)/
△IOUT
(△VOUT/VOUT)/
△VIN
VIN=4.3V, 1mA≤IOUT≤30mA
VIN=4.3V,
VOUT=3.251V to 3.350V
VIN=4.3V, 1mA≤IOUT≤600mA
4.3V≤VIN≤6V, IOUT=30mA
IOUT=10mA
VOUT
*98.5%
600
-1
-0.1
3.3
VOUT
*101.5%
0.2 1
0.02 0.1
58
Unit
V
mA
%/A
%/V
Dropout Voltage
VDROP
IOUT=300mA
125 200 mV
IOUT=600mA
250 400
Quiescent Current
IQ VIN=4.3V, IOUT=0mA
55 80 μA
Standby Current
ISTD VIN=4.3V, VEN in OFF mode
0.01 1.0 μA
Power Supply Rejection
Ratio
PSRR
Ripple 0.5Vp-p f=100Hz
VIN=4.3V,
IOUT=100mA
f=1KHz
Output Voltage
Temperature Coefficient
(△VOUT/VOUT)/
△T
IOUT=30mA
TA=-40°C to
85°C
Short Current Limit
ISHORT
VOUT=0V
65
65
±100
50
dB
ppm/°C
mA
RMS Output Noise
VNOISE
No Load, 10Hz≤f≤100kHz
50 μVRMS
VEN High Voltage
VEN Low Voltage
VIH Enable logic high, regulator on 1.5
VIL
Enable logic low, regulator off
0
6.0
V
0.4
Start-up Time
tS No Load
20 μs
EN Pull Down Resistor
RPD
3.0 MΩ
VOUT Discharge Resistor
Thermal
Temperature
Thermal
Hysteresis
Shutdown
Shutdown
RDCHG
TOTSD
THYOTSD
Set EN pin at Low
SOT-23-5
60 Ω
160
°C
25
96
Thermal Resistance
θJC SOIC-8
75 °C/W
SOT-89-5
47
Note 2: To prevent the Short Circuit Current protection feature from being prematurely activated, the input
voltage must be applied before a current source load is applied.
Note 3: Production testing at TA=25°C. Over temperature specifications guaranteed by design only.
Mar. 2013 Rev. 2. 0
BCD Semiconductor Manufacturing Limited
11
11 Page |
Páginas | Total 21 Páginas | |
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