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K2733 PDF даташит

Спецификация K2733 изготовлена ​​​​«Toshiba Semiconductor» и имеет функцию, называемую «MOSFET ( Transistor ) - 2SK2733».

Детали детали

Номер произв K2733
Описание MOSFET ( Transistor ) - 2SK2733
Производители Toshiba Semiconductor
логотип Toshiba Semiconductor логотип 

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K2733 Даташит, Описание, Даташиты
2SK2733
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII)
2SK2733
Chopper Regulator, DCDC Converter and Motor Drive
Applications
Unit: mm
l Low drainsource ON resistance : RDS (ON) = 8.0 (typ.)
l High forward transfer admittance : |Yfs| = 0.9 S (typ.)
l Low leakage current
: IDSS = 100 µA (max) (VDS = 720 V)
l Enhancementmode
: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Drainsource voltage
Draingate voltage (RGS = 20 k)
Gatesource voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
Rating
900
900
±30
1
3
60
324
1
6.0
150
55~150
Unit
V
V
V
A
W
mJ
A
mJ
°C
°C
JEDEC
TO-220AB
JEITA
SC-46
TOSHIBA
2-10P1B
Weight: 2.0 g (typ.)
Thermal Characteristics
Characteristics
Symbol Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Rth (chc)
Rth (cha)
2.08
83.3
°C / W
°C / W
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 594 mH, RG = 25 , IAR = 1 A
Note 3: Repetitive rating: Pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device.
Please handle with caution.
1 2002-09-02









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K2733 Даташит, Описание, Даташиты
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Gate leakage current
Gatesource breakdown voltage
Drain cutoff current
Drainsource breakdown voltage
Gate threshold voltage
Drainsource ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
IGSS
V (BR) GSS
IDSS
V (BR) DSS
Vth
RDS (ON)
|Yfs|
Ciss
Crss
Coss
VGS = ±30 V, VDS = 0 V
IG = ±10 µA, VDS = 0 V
VDS = 720 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
VDS = 10 V, ID = 1 mA
VGS = 10 V, ID = 0.5 A
VDS = 20 V, ID = 0.5 A
VDS = 25 V, VGS = 0 V, f = 1 MHz
Rise time
tr
Switching time
Turnon time
Fall time
ton
tf
Turnoff time
Total gate charge (gatesource
plus gatedrain)
Gatesource charge
Gatedrain (“miller”) Charge
toff
Qg
Qgs VDD 400 V, VGS = 10 V, ID = 1 A
Qgd
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
IDR = 1 A, VGS = 0 V
IDR = 1 A, VGS = 0 V
dIDR / dt = 100 A / µs
Marking
2SK2733
Min Typ. Max Unit
― ― ±10 µA
±30
V
— — 100 µA
900 —
V
2.0 — 4.0 V
— 8.0 9.0
0.2 0.9
S
— 370 —
— 5 — pF
— 40 —
— 20 —
— 70 —
ns
— 30 —
— 95 —
— 15 —
— 6 — nC
—9—
Min Typ. Max Unit
—— 1 A
—— 3 A
1.9
V
— 750 —
ns
— 3 — µC
2 2002-09-02









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K2733 Даташит, Описание, Даташиты
2SK2733
3 2002-09-02










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Номер в каталогеОписаниеПроизводители
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