(PDF) Si4450DY Datasheet - N-Channel Enhancement-Mode MOSFET

Número de pieza	Si4450DY
Descripción	N-Channel Enhancement-Mode MOSFET
Fabricantes	TEMIC
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No Preview Available ! N-Channel Enhancement-Mode MOSFET Product Summary VDS (V) 60 rDS(on) (W) 0.024 @ VGS = 10 V 0.03 @ VGS = 6.0 V ID (A) "7.5 "6.5 Si4450DY SO-8 S1 S2 S3 G4 8D 7D 6D 5D Top View D G S N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted) Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C VDS VGS ID IDM IS PD TJ, Tstg 60 "20 "7.5 "5.5 "50 2.1 2.5 1.6 –55 to 150 V A W _C Thermal Resistance Ratings Parameter Symbol Limit Unit Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board, t v 10 sec. RthJA 50 _C/W Subsequent updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #1226. Siliconix S-47958—Rev. C, 15-Apr-96 1 1 page

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PDF Si4450DY Data sheet ( Hoja de datos )