(PDF) SPN9910T251TGB Datasheet - N-Channel Enhancement Mode MOSFET

Número de pieza	SPN9910T251TGB
Descripción	N-Channel Enhancement Mode MOSFET
Fabricantes	SYNC POWER
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No Preview Available ! SPN9910 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN9910 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for most of synchronous buck converter applications. APPLICATIONS z DC/DC Converter z Load Switch z Synchronous Buck Converter FEATURES 60V/60A, RDS(ON)= 10mΩ@VGS= 10V 60V/60A, RDS(ON)= 12.0mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability TO-252 . TO-251 package design PIN CONFIGURATION TO-252 TO-251 PART MARKING 2011 / 08 / 22 Ver.1 Page 1 1 page SPN9910 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS Fig. 7 Typical Capacitance Characteristics Fig. 8 Maximum Safe Operation Area Fig. 9 Effective Transient Thermal Impedance Fig. 10 Switching Time Waveform 2011 / 08 / 22 Ver.1 Fig. 11 Unclamped Inductive Waveform Page 5 5 Page

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PDF SPN9910T251TGB Data sheet ( Hoja de datos )