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PDF MTD2955V Data sheet ( Hoja de datos )
| Número de pieza | MTD2955V | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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MTD2955V
Power MOSFET
12 Amps, 60 Volts
P–Channel DPAK
This Power MOSFET is designed to withstand high ener gy in the
avalanche and commutation modes. Designed for low voltage, high
speed switching applications in power supplies, converters and power
motor controls, these devices are particularly well suited for bridge
circuits where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected voltage
transients.
• Avalanche Energy Specified
• IDSS and VDS(on) Specified at Elevated Temperature
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain–to–Source Voltage
Drain–to–Gate Voltage (RGS = 1.0 MΩ)
Gate–to–Source Voltage
– Continuous
– Non–repetitive (tp ≤ 10 ms)
Drain Current – Continuous
Drain Current – Continuous @ 100°C
Drain Current – Single Pulse (tp ≤ 10 µs)
Total Power Dissipation
Derate above 25°C
Total Power Dissipation @ 25°C (Note 1.)
VDSS
VDGR
VGS
VGSM
ID
ID
IDM
PD
60
60
± 20
± 25
12
8.0
42
60
0.4
2.1
Vdc
Vdc
Vdc
Vpk
Adc
Apk
Watts
W/°C
Watts
Operating and Storage Temperature
Range
TJ, Tstg –55 to
175
°C
Single Pulse Drain–to–Source Avalanche EAS 216 mJ
Energy – Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vdc, Peak
IL = 12 Apk, L = 3.0 mH, RG = 25 Ω)
Thermal Resistance
– Junction to Case
– Junction to Ambient
– Junction to Ambient (Note 1.)
RθJC
RθJA
RθJA
°C/W
2.5
100
71.4
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10
seconds
TL
260 °C
1. When surface mounted to an FR4 board using the minimum recommended
pad size.
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12 AMPERES
60 VOLTS
RDS(on) = 230 mΩ
P–Channel
D
G
S
MARKING
DIAGRAM
4
12
3
Y
WW
T
CASE 369A
DPAK
STYLE 2
= Year
= Work Week
= MOSFET
YWW
T
2955V
PIN ASSIGNMENT
4
Drain
1 23
Gate Drain Source
ORDERING INFORMATION
Device
Package
Shipping
MTD2955V
DPAK
75 Units/Rail
MTD2955V1
DPAK
75 Units/Rail
MTD2955VT4
DPAK 2500 Tape & Reel
© Semiconductor Components Industries, LLC, 2000
November, 2000 – Rev. 4
1
Publication Order Number:
MTD2955V/D
http://www.Datasheet4U.com
1 page  
MTD2955V
10 30
9 QT 27
8 Q1
Q2
24
7 VGS 21
6 18
5 15
4 12
3
2
1 Q3
0 0 2 468
ID = 12 A 9
TJ = 25°C 6
VDS 3
0
10 12 14 16 18 20
QT, TOTAL CHARGE (nC)
Figure 8. Gate–To–Source and Drain–To–Source
Voltage versus Total Charge
1000
VDD = 30 V
ID = 12 A
VGS = 10 V
TJ = 25°C
100
tr
tf
td(off)
10 td(on)
1
1 10
RG, GATE RESISTANCE (OHMS)
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
DRAIN–TO–SOURCE DIODE CHARACTERISTICS
12
11 VGS = 0 V
10 TJ = 25°C
9
8
7
6
5
4
3
2
1
0
0.5 0.7 0.9 1.1 1.3 1.5 1.7
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
1.9
Figure 10. Diode Forward Voltage versus Current
100
SAFE OPERATING AREA
The Forward Biased Safe Operating Area curves define
the maximum simultaneous drain–to–source voltage and
drain current that a transistor can handle safely when it is
forward biased. Curves are based upon maximum peak
junction temperature and a case temperature (TC) of 25°C.
Peak repetitive pulsed power limits are determined by using
the thermal response data in conjunction with the procedures
discussed in AN569, “T ransient Thermal
Resistance–GeneralData and Its Use.”
Switching between the of f–state and the on–state may
traverse any load line provided neither rated peak current
(IDM) nor rated voltage (V DSS) is exceeded and the
transition time (tr,tf) do not exceed 10µs. In addition the total
power averaged over a complete switching cycle must not
exceed (TJ(MAX) – TC)/(RθJC).
A Power MOSFET designated E–FET can be safely used
in switching circuits with unclamped inductive loads. For
reliable operation, the stored energy from circuit inductance
dissipated in the transistor while in avalanche must be less
than the rated limit and adjusted for operating conditions
differing from those specified. Although industry practice is
to rate in terms of energy, avalanche energy capability is not
a constant. The energy rating decreases non–linearly with an
increase of peak current in avalanche and peak junction
temperature.
Although many E–FETs can withstand the stress of
drain–to–source avalanche at currents up to rated pulsed
current (I DM), the ener gy rating is specified at rated
continuous current (I D), in accordance with industry
custom. The energy rating must be derated for temperature
as shown in the accompanying graph (Figure 12). Maximum
energy at currents below rated continuous ID can safely be
assumed to equal the values indicated.
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5
5 Page 
Notes
MTD2955V
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11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet MTD2955V.PDF ] | |
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