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PDF MURF1605CT Data sheet ( Hoja de datos )
| Número de pieza | MURF1605CT | |
| Descripción | (MURF1605 - MURF1660) 16.0 Ampere Isolated Glass Passivated Ultra Fast Recovery Rectifier | |
| Fabricantes | Thinki Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MURF1605CT (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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MURF1605 thru MURF1660
®
MURF1605 thru MURF1660
Pb Free Plating Product
Pb
16.0 Ampere Isolated Glass Passivated Ultra Fast Recovery Rectifier
Features
Fast switching for high efficiency
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
Application
Automotive Environment|DC Motor Control
Plating Power Supply|UPS
Amplifier and Sound Device System etc..
Mechanical Data
Case: Molded plastic Isolated/Insulated ITO-220AB
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
Polarity: As marked on diode body
Mounting position: Any
Weight: 2.03 grams
ITO-220AB
.406(10.3)
.381(9.7)
.134(3.4)
.118(3.0)
Unit : inch (mm)
.189(4.8)
.165(4.2)
.130(3.3)
.114(2.9)
.071(1.8)
.055(1.4)
.055(1.4)
.039(1.0)
.035(0.9)
.011(0.3)
.1
(2.55)
.1
(2.55)
.114(2.9)
.098(2.5)
.032(.8)
MAX
Case
Case
Case
Case
Positive
Negative
Common Cathode Common Anode
Suffix "CT"
Suffix "N"
Doubler Reverse Doubler
Suffix "D"
Suffix "E"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25oC ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
COMMON CATHODE POLARITY
COMMON ANODE POLARITY
DOUBLER POLARITY
REVERSE POLARITY
SUFFIX "CT"
SUFFIX "N"
SUFFIX "D"
SUFFIX "E"
MURF1605CT MURF1610CT MURF1620CT MURF1630CT MURF1640CT MURF1660CT
SYMBOL MURF1605N MURF1610N MURF1620N MURF1630N MURF1640N MURF1660N UNIT
MURF1605D MURF1610D MURF1620D MURF1630D MURF1640D MURF1660D
MURF1605E MURF1610E MURF1620E MURF1630E MURF1640E MURF1660E
Maximum Recurrent Peak Reverse Voltage VRRM
50
100 200 300 400 600 V
Maximum RMS Voltage
VRMS
35
70 140 210 280 420 V
Maximum DC Blocking Voltage
VDC 50 100 200 300 400 600 V
Maximum Average Forward Rectified
Current TC=100oC
IF(AV)
16.0 A
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load
(JEDEC method)
IFSM
175
150 A
Maximum Instantaneous Forward Voltage
@ 8.0 A
VF
Maximum DC Reverse Current @TJ=25oC
At Rated DC Blocking Voltage @TJ=125oC
IR
Maximum Reverse Recovery Time (Note 1) Trr
Typical junction Capacitance (Note 2)
CJ
Typical Thermal Resistance (Note 3)
R JC
Operating Junction and Storage
Temperature Range
TJ, TSTG
0.98 1.3
10.0
250
35
90
2.2
-55 to + 150
1.7 V
uA
uA
nS
pF
oCW
oC
NOTES : (1) Reverse recovery test conditions IF= 0.5A, IR= 1.0A, Irr = 0.25A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
(3) Thermal Resistance junction to case.
Page 1/2
© 2006 Thinki Semiconductor Co.,Ltd.
http://www.thinkisemi.com/
Free Datasheet http://www.datasheet4u.com/
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet MURF1605CT.PDF ] | |
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