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PDF AUIRF7379Q Data sheet ( Hoja de datos )
| Número de pieza | AUIRF7379Q | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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AUTOMOTIVE MOSFET
PD - 96366B
AUIRF7379Q
Features
l Advanced Planar Technology
l Low On-Resistance
l Dual N and P Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l 150°C Operating Temperature
l Automotive [Q101] Qualified
l Lead-Free, RoHS Compliant
Description
Specifically designed for Automotive applications, these
HEXFET® Power MOSFET's in a Dual SO-8 package utilize
the lastest processing techniques to achieve extremely low
on-resistance per silicon area. Additional features of these
Automotive qualified HEXFET Power MOSFET's are a 150°C
junction operating temperature, fast switching speed and
improved repetitive avalanche rating. These benefits combine
to make this design an extremely efficient and reliable device
for use in Automotive applications and a wide variety of other
applications.
The efficient SO-8 package provides enhanced thermal
characteristics and dual MOSFET die capability making it ideal
in a variety of power applications. This dual, surface mount
SO-8 can dramatically reduce board space and is also available
in Tape & Reel.
HEXFET® Power MOSFET
N-CHANNEL MOSFET
S1 1
8 D1
G1 2
7 D1
S2 3
6 D2
G2 4
5 D2
P-CHANNEL MOSFET
Top View
N-Ch P-Ch
V(BR)DSS
30V -30V
RDS(on) typ. 0.038Ω 0.070Ω
max. 0.045Ω 0.090Ω
ID 5.8A -4.3A
G
Gate
SO-8
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are
stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
VGS
dv/dt
TJ
TSTG
Drain-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cPulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
dPeak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Thermal Resistance
Parameter
fRθJA Junction-to-Ambient
Max.
N-Channel
30
5.8
4.6
46
2.5
0.02
± 20
5.0
P-Channel
-30
-4.3
-3.4
-34
-5.0
-55 to + 150
Units
V
A
W
V
V/ns
°C
Typ.
–––
Max.
50
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
Free Datasheet http://www.d0a8t/a2s4h/e1e1t4u.com/
1 page  
N-Channel
AUIRF7379Q
2.0 ID = 4.0A
1.5
1.0
0.5
0.0
-60
VGS = 10V A
-40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 5. Normalized On-Resistance
Vs. Temperature
0.20
0.16
0.12
0.08
0.04
0.00
2
VGS = 4.5V
VGS = 10V
468
I D , Drain Current (A)
10
Fig 6. Typical On-Resistance Vs. Drain
Current
0.08
0.07
0.06
0.05
ID = 5.8A
0.04
0.03
0
4 8 12 16
VGS , Gate-to-Source Voltage (V)
Fig 7. Typical On-Resistance Vs. Gate
Voltage
www.irf.com
5
Free Datasheet http://www.datasheet4u.com/
5 Page 
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
AUIRF7379Q
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 10 )
N-Channel ISD ≤ 2.4A, di/dt ≤ 73A/μs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
P-Channel ISD ≤ -1.8A, di/dt ≤ 90A/μs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
Pulse width ≤ 300μs; duty cycle ≤ 2%.
Surface mounted on FR-4 board, t ≤ 10sec.
www.irf.com
14.40 ( .566 )
12.40 ( .488 )
11
Free Datasheet http://www.datasheet4u.com/
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet AUIRF7379Q.PDF ] | |
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