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Datasheet 2N6660 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 2N6660 | N-Channel Enhancement-Mode Vertical DMOS FET 2N6660
N-Channel, Enhancement-Mode, Vertical DMOS FET
Features
• Free from secondary breakdown • Low power drive requirement • Ease of paralleling • Low CISS and fast switching speeds • Excellent thermal stability • Integral source-drain diode • High input impedance and high gain
Appl |  Microchip | data |
| 2 | 2N6660 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET
2N6660
• VDSS = 60V , ID = 1.0A, RDS(ON) = 3.0Ω • Fast Switching • Low Threshold Voltage (Logic Level) • Low CISS • Integral Source-Drain Body Diode • Hermetic Metal TO39 Package • High Reliability Screening Options Available
ABSOLUTE MAXIMUM |  Seme LAB | mosfet |
| 3 | 2N6660 | N-Channel Enhancement-Mode Vertical DMOS FETs Supertex inc.
2N6660
N-Channel Enhancement-Mode Vertical DMOS FET
Features
►►Free from secondary breakdown ►►Low power drive requirement ►►Ease of paralleling ►►Low CISS and fast switching speeds ►►Excellent thermal stability ►►Integral source-drain diode ►►High input |  Supertex Inc | data |
| 4 | 2N6660 | TMOS SWITCHING FET TRANSISTORS 2N6659 MPF6659 2N6660 MPF6660 2N6661 MPF6661
N-CHANNEL ENHANCEMENT-MODE TMOS POWER FIELD-EFFECT TRANSISTOR
These TMOS Power FETs are designed. for high-current, high-
speed power switching applications such as switching power sup-
plies, ,CMOS logic, microprocessor or ~L-to-tiigh current .,interfa |  Motorola Inc | transistor |
| 5 | 2N6660 | N-Channel 60 V (D-S) MOSFET www.DataSheet.co.kr
2N6660, 2N6660-2, 2N6660JANTX, 2N6660JANTXV
www.vishay.com
Vishay Siliconix
N-Channel 60 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () at VGS = 10 V Configuration 60 3 Single
FEATURES
• Military Qualified • • • • • • • • • • •
3 D
TO-205AD (TO- |  Vishay Siliconix | mosfet |
2N6 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 2N60 | N-CHANNEL MOSFET
UNISONIC TECHNOLOGIES CO., LTD 2N60
2 Amps, 600 Volts N-CHANNEL MOSFET
DESCRIPTION
The UTC 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche charact  Unisonic Technologies mosfet | | |
| 2 | 2N60-E | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD
2N60-E
2A, 600V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 2N60-E is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. Unisonic Technologies mosfet | | |
| 3 | 2N6008 | Series 2N Transistors Sprague transistor | | |
| 4 | 2N6009 | Series 2N Transistors Sprague transistor | | |
| 5 | 2N6010 | Silicon Transistors Semiconductor transistor | | |
| 6 | 2N6027 | SILICON PROGRAMMABLE UNIJUNCTION TRANSISTORS 2N6027 2N6028
SILICON PROGRAMMABLE UNIJUNCTION TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6027 and 2N6028 devices are silicon programmable unijunction transistors, manufactured in an epoxy molded package, designed for adjustable (programmable) characte  Central Semiconductor transistor | | |
| 7 | 2N6027 | Programmable Unijunction Transistor 2N6027, 2N6028
Preferred Device
Programmable Unijunction Transistor
Programmable Unijunction Transistor Triggers
Designed to enable the engineer to “program’’ unijunction characteristics such as RBB, h, IV, and IP by merely selecting two resistor values. Application includes thyristor−trigge  ON Semiconductor transistor | |
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