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PDF SI2300DS Data sheet ( Hoja de datos )
| Número de pieza | SI2300DS | |
| Descripción | N-Channel 30-V (D-S) MOSFET | |
| Fabricantes | Vishay Siliconix | |
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Si2300DS
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.068 at VGS = 4.5 V
30
0.085 at VGS = 2.5 V
ID (A)
3.6a
3.4
Qg (Typ.)
3 nC
TO-236
(SOT-23)
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• DC/DC Converter for Portable Devices
• Load Switch
G1
S2
3D
Top View
Si2300DS (P2)*
* Marking Code
Ordering Information: Si2300DS-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current
IDM
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
TA = 70 °C
Operating Junction and Storage Temperature Range
TJ, Tstg
Soldering Recommendations (Peak Temperature)d, e
Limit
30
± 12
3.6a
3.0
3.1b, c
2.5b, c
15
1.4
0.9b, c
1.7
1.1
1.1b, c
0.7b, c
- 55 to 150
260
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
t≤5s
Maximum Junction-to-Foot (Drain)
Steady State
Notes:
a. Package limited
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 130 °C/W.
Symbol
RthJA
RthJF
Document Number: 65701
S10-0111-Rev. A, 18-Jan-10
Typical
90
60
Maximum
115
75
Unit
°C/W
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
5 2.0
4
Package Limited
3
2
1
1.5
1.0
0.5
Si2300DS
Vishay Siliconix
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*
0.0
25
50 75 100 125
TC - Case Temperature (°C)
Power Derating
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 65701
S10-0111-Rev. A, 18-Jan-10
www.vishay.com
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| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet SI2300DS.PDF ] | |
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