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PDF AMMP-6530 Data sheet ( Hoja de datos )

Número de pieza AMMP-6530
Descripción 5-30 GHz Image Reject Mixer
Fabricantes Agilent Technologies 
Logotipo Agilent Technologies Logotipo



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Agilent AMMP-6530
www.DataSheet4U.co
5– 30 GHz Image Reject Mixer
Data Sheet
Description
Agilent’s AMMP-6530 is an image
reject mixer that operates from
5 GHz to 30 GHz. The cold
channel FET mixer is designed to
be an easy-to-use component for
any surface mount PCB applica-
tion. It can be used drain pumped
for low conversion loss applica-
tions, or when gate pumped the
mixer can provide high linearity
for SSB up-conversion. An
external 90-degree hybrid is used
to achieve image rejection and a
-1V voltage reference is needed.
Intended applications include
microwave radios, 802.16, VSAT,
and satellite receivers. Since this
one mixer can cover several
bands, the AMMP-6530 can
reduce part inventory. The
integrated mixer eliminates
complex tuning and assembly
processes typically required by
hybrid (discrete-FET or diode)
mixers. The package is fully SMT
compatible with backside ground-
ing and I/O to simplify assembly.
NC
7
Vg
6
NC
5
8
RF
IF1
1
NC
2
IF2
3
gate
4
Top view
Pin Function package base: GND
1 IF1
2
3 IF2
4 LO
5
6 Vg
7
8 RF
Features
5x5 mm Surface Mount Package
Broad Band Performance 530 GHz
Low Conversion Loss of 8 dB
High Image Rejection of 15 20 dB
Good 3rd Order Intercept of
+18 dBm
Single -1V, no current Supply Bias
Applications
Microwave Radio Systems
Satellite VSAT, DBS Up/Down Link
LMDS & Pt-Pt mmW Long Haul
Broadband Wireless Access
(including 802.16 and 802.20
WiMax)
WLL and MMDS loops
Commercial grade military
Absolute Maximum Ratings[1]
Symbol Parameters/Conditions
Units Min. Max.
Vg Gate Supply Voltage
V 0 -3
Pin CW Input Power
dBm 15
Tch Operating Channel Temperature
°C
+150
Tstg Storage Case Temperature
°C -65 +150
Tmax Max. Assembly Temp (60 sec max) °C
+300
Note:
1. Operation in excess of any one of these conditions may result in permanent damage to this device.
Attention: Observe precautions for handling electrostatic sensitive devices.
ESD Machine Model (Class A)
ESD Human Body Model (Class 0)
Refer to Agilent Application Note A004R: Electrostatic Discharge Damage and Control.

1 page




AMMP-6530 pdf
AMMP-6530 Typical Performance under Gate Pumped Up Conversion
Operation (TA = 25°C, Vg = -1V, Zo=50)
LO
4
gate
LSB 3
IF2
2
NC
USB 1
IF1
5
NC
6
Vg
7
NC
-1V
drain
8
RF
0
-5 USB (dB)
LSB (dB)
-10
-15
-20
-25
-30
-35
-40
-45
-50
5 10 15 20 25 30
FREQUENCY (GHz)
Figure 11. Up-conversion Gain with IF
terminated for Low Side Conversion.
LO=+5 dBm, IF=+5 dBm, IF=1 GHz.
0
-5
-10
-15
-20
-25
-30
-35
-40
5 10 15 20 25 30
FREQUENCY (GHz)
Figure 13. LO-RF Up-conversion Isolation.
0
-5 USB (dB)
LSB (dB)
-10
-15
-20
-25
-30
-35
-40
-45
-50
5 10 15 20 25
FREQUENCY (GHz)
Figure 12. Up-conversion Gain wth IF
terminated for High Side Conversion.
LO=+5 dBm, IF=+5 dBm, IF=1 GHz.
30
-5
-7
-9
-11
-13
-15
0 2 4 6 8 10 12 14 16 18 20
PLO=PIF (dB)
Figure 14. Up-conversion Gain vs. Pumping
Power. LO power=IF power, IF=1 GHz,
RF=25 GHz.
5
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