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PDF MRF6S19120HSR3 Data sheet ( Hoja de datos )
| Número de pieza | MRF6S19120HSR3 | |
| Descripción | RF Power Field Effect Transistors | |
| Fabricantes | Freescale Semiconductor | |
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Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for N - CDMA base station applications with frequencies from 1930
to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
t i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L
www.datasahpepeltic4au.tcioonms.
• TS10yyp0ni0cc,amPl ASa,ginPingogleu,t-T=Craa1fr9friicWerCaNottds-eCAsDv8Mg.TA, hFPruoelulrgfFohrrem1q3au)necCnech:yaVnBDnaDenld=B,2aIS8nd-V9wo5ildtsCt,hDI=DMQA=(Pilot,
1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 15 dB
Drain Efficiency — 21.5%
ACPR @ 885 kHz Offset — - 54 dBc in 30 kHz Bandwidth
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 120 Watts CW
Output Power
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• Lower Thermal Resistance Package
• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
• Low Gold Plating Thickness on Leads, 40μ″ Nominal.
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Document Number: MRF6S19120H
Rev. 1, 5/2006
MRF6S19120HR3
MRF6S19120HSR3
1930 - 1990 MHz, 19 W AVG., 28 V
SINGLE N - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465 - 06, STYLE 1
NI - 780
MRF6S19120HR3
CASE 465A - 06, STYLE 1
NI - 780S
MRF6S19120HSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
VDSS
VGS
PD
- 0.5, +68
- 0.5, +12
407
2.3
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Table 2. Thermal Characteristics
Tstg - 65 to +150
TC 150
TJ 200
Characteristic
Symbol
Value (1,2)
Thermal Resistance, Junction to Case
Case Temperature 80°C, 120 W CW
Case Temperature 73°C, 19 W CW
RθJC
0.43
0.45
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Unit
Vdc
Vdc
W
W/°C
°C
°C
°C
Unit
°C/W
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF6S19120HR3 MRF6S19120HSR3
1
1 page  
www.datasheet4u.com
TYPICAL CHARACTERISTICS
15.6 26
15.4 24
15.2 ηD
22
15 Gps VDD = 28 Vdc, Pout = 19 W (Avg.), IDQ = 1000 mA 20
Single−Carrier N−CDMA, 1.2288 MHz Channel
14.8
Bandwidth, PAR = 9.8 dB @ 0.01%
−45
IRL Probability (CCDF)
14.6
−50
ACPR
14.4 −55
14.2 ALT1
−60
14 −65
1940 1950 1960 1970 1980 1990 2000 2010 2020 2030 2040
−10
−12
−14
−16
−18
−20
−22
−24
−26
f, FREQUENCY (MHz)
Figure 3. 2 - Carrier N - CDMA Broadband Performance @ Pout = 19 Watts Avg.
15.6 32
15.4
ηD
15.2
30
28
15
14.8 IRL
Gps
14.6
14.4 ACPR
VDD = 28 Vdc, Pout = 32 W (Avg.), IDQ = 1000 mA
Single−Carrier N−CDMA, 1.2288 MHz Channel
Bandwidth, PAR = 9.8 dB
@ 0.01% Probability (CCDF)
26
−35
−40
−45
14.2 ALT1
−50
14 −55
1940 1950 1960 1970 1980 1990 2000 2010 2020 2030 2040
−10
−12
−14
−16
−18
−20
−22
−24
−26
f, FREQUENCY (MHz)
Figure 4. 2 - Carrier N - CDMA Broadband Performance @ Pout = 32 Watts Avg.
17
IDQ = 1500 mA
16
1250 mA
15 1000 mA
750 mA
14
13 500 mA
12
0.6 1
VDD = 28 Vdc
f1 = 1988.75 MHz, f2 = 1991.25 MHz
Two−Tone Measurements, 2.5 MHz Tone Spacing
10 100 300
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus
Output Power
−20
VDD = 28 Vdc
−25 f1 = 1988.75 MHz, f2 = 1991.25 MHz
Two−Tone Measurements, 2.5 MHz Tone Spacing
−30
IDQ = 500 mA
−35
750 mA
1500 mA
−40
−45
1250 mA
−50
−55
0.6 1
1000 mA
10
100 300
Pout, OUTPUT POWER (WATTS) PEP
Figure 6. Third Order Intermodulation Distortion
versus Output Power
RF Device Data
Freescale Semiconductor
MRF6S19120HR3 MRF6S19120HSR3
5
5 Page 
PACKAGE DIMENSIONS
B
B
(FLANGE)
www.datasheet4u.com
H
E
A
G
1
2X Q
bbb M T A M B M
2
D
bbb M T A M
A
(FLANGE)
3
K
BM
M (INSULATOR)
bbb M T A M
N (LID)
ccc M T A M
C
T
SEATING
PLANE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
R (LID)
B M ccc M T A M B M
S (INSULATOR)
B M aaa M T A M B M
CASE 465 - 06
ISSUE G
NI - 780
MRF6S19120HR3
F
INCHES
DIM MIN MAX
A 1.335 1.345
B 0.380 0.390
C 0.125 0.170
D 0.495 0.505
E 0.035 0.045
F 0.003 0.006
G 1.100 BSC
H 0.057 0.067
K 0.170 0.210
M 0.774 0.786
N 0.772 0.788
Q .118 .138
R 0.365 0.375
S 0.365 0.375
aaa 0.005 REF
bbb 0.010 REF
ccc 0.015 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
MILLIMETERS
MIN MAX
33.91 34.16
9.65 9.91
3.18 4.32
12.57 12.83
0.89 1.14
0.08 0.15
27.94 BSC
1.45 1.70
4.32 5.33
19.66 19.96
19.60 20.00
3.00 3.51
9.27 9.53
9.27 9.52
0.127 REF
0.254 REF
0.381 REF
4X U
(FLANGE)
B
4X Z
(LID)
1
B
(FLANGE)
H
E
A
2
D
bbb M T A M
A
(FLANGE)
2X K
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
BM
N (LID)
ccc M T A M B M
M (INSULATOR)
bbb M T A M B M
R (LID)
ccc M T A M B M
S (INSULATOR)
aaa M T A M B M
C
3
T
SEATING
PLANE
CASE 465A - 06
ISSUE H
NI - 780S
MRF6S19120HSR3
F
INCHES
DIM MIN MAX
A 0.805 0.815
B 0.380 0.390
C 0.125 0.170
D 0.495 0.505
E 0.035 0.045
F 0.003 0.006
H 0.057 0.067
K 0.170 0.210
M 0.774 0.786
N 0.772 0.788
R 0.365 0.375
S 0.365 0.375
U −−− 0.040
Z −−− 0.030
aaa 0.005 REF
bbb 0.010 REF
ccc 0.015 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
5. SOURCE
MILLIMETERS
MIN MAX
20.45 20.70
9.65 9.91
3.18 4.32
12.57 12.83
0.89 1.14
0.08 0.15
1.45 1.70
4.32 5.33
19.61 20.02
19.61 20.02
9.27 9.53
9.27 9.52
−−− 1.02
−−− 0.76
0.127 REF
0.254 REF
0.381 REF
RF Device Data
Freescale Semiconductor
MRF6S19120HR3 MRF6S19120HSR3
11
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| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet MRF6S19120HSR3.PDF ] | |
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