PDF MRF3010 Data sheet ( Hoja de datos )

Número de pieza	MRF3010
Descripción	LATERAL N-CHANNEL BROADBAND RF POWER MOSFET
Fabricantes	Motorola Semiconductors
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No Preview Available ! MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET Designed for IMARSAT satellite up link at 1.6 to 1.64 GHz, 28 volts, Class AB, CW amplifier applications. • Guaranteed Performance @ 1.6 GHz, 28 Volts D Output Power = 10 Watts Minimum Gain = 9.5 dB @ 10 Watts Minimum Efficiency = 45% @ 10 Watts www.DataSheet4U.com • High Gain, Rugged Device • Bottom Side Source Eliminates DC Isolators, Reducing Common Mode Inductances • Broadband Performance of This Device Makes It Ideal for Applications from 800 to 1700 MHz, Common–Source Class AB Operation. • Typical Performance at Class A Operation: Pout = 2 Watts, VDD = 28 Volts, IDQ = 1 A, Gain = 12.5 dB, IMD = –32 dB G S • Characterized with Small–Signal S–Parameters from 500 to 2500 MHz • Capable of Handling 30:1 VSWR, @ 28 Vdc • Circuit Board Available Upon Request by Contacting RF Tactical Marketing in Phoenix, AZ Order this document by MRF3010/D MRF3010 10 W, 1.6 GHz, 28 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFET CASE 360B–01, STYLE 1 MAXIMUM RATINGS Drain–Source Voltage Gate–Source Voltage Storage Temperature Range Operating Junction Temperature Rating ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol OFF CHARACTERISTICS Drain–Source Breakdown Voltage (VGS = 0, ID = 1 µA) V(BR)DSS Zero Gate Voltage Drain Current (VDS = 28 V, VGS = 0) IDSS Gate–Source Leakage Current (VGS = 20 V, VDS = 0) IGSS Symbol VDSS VGS Tstg TJ Min 65 – – Value 65 ± 20 – 65 to +150 200 Typ Max –– – 10 –1 Unit Vdc Vdc °C °C Unit Vdc µAdc µAdc NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 1 ©MMOotoTrOolaR, OIncL.A19R98F DEVICE DATA MRF3010 1 1 page f MHz 1320 1340 1360 1380 1400 1420 1440 1460 1480 1500 www.DataSheet4U.co1m520 1540 1560 1570 1580 1590 1600 1610 1620 1630 1640 1650 1660 1670 1680 1690 1700 1750 1800 1850 1900 1950 2000 2050 2100 2150 2200 2250 2300 2350 2400 2500 \|S11\| 0.901 S11 ∠φ 162 \|S21\| 1.52 S21 ∠φ –2 \|S12\| 0.018 S12 ∠φ 49 \|S22\| 0.866 S22 ∠φ –164 0.906 162 1.49 –3 0.021 61 0.873 –165 0.907 161 1.47 –4 0.022 61 0.875 –166 0.905 161 1.44 –5 0.022 58 0.877 –167 0.901 160 1.42 –7 0.021 58 0.881 –168 0.900 159 1.39 –7 0.022 57 0.884 –168 0.903 158 1.37 –9 0.022 58 0.885 –169 0.912 158 1.34 –10 0.021 56 0.887 –170 0.905 161 1.44 –5 0.022 58 0.877 –167 0.910 156 1.30 –11 0.024 56 0.889 –171 0.903 156 1.27 –12 0.023 57 0.891 –172 0.899 155 1.26 –13 0.025 58 0.892 –173 0.902 154 1.24 –15 0.026 56 0.893 –173 0.902 153 1.22 –15 0.026 52 0.894 –174 0.906 153 1.22 –16 0.024 53 0.892 –174 0.906 153 1.21 –16 0.025 51 0.892 –174 0.909 152 1.20 –17 0.026 49 0.892 –175 0.911 152 1.20 –17 0.028 49 0.891 –175 0.912 152 1.19 –17 0.026 53 0.889 –175 0.907 151 1.18 –18 0.026 51 0.888 –176 0.905 151 1.17 –18 0.027 55 0.889 –176 0.895 150 1.16 –18 0.024 53 0.889 –177 0.893 150 1.15 –19 0.027 52 0.889 –177 0.890 150 1.14 –19 0.027 53 0.891 –177 0.894 149 1.13 –20 0.026 51 0.891 –178 0.899 148 1.12 –20 0.027 49 0.889 –178 0.899 148 1.12 –21 0.027 53 0.888 –178 0.905 147 1.09 –24 0.028 51 0.881 –180 0.887 144 1.06 –26 0.029 50 0.889 179 0.893 142 1.03 –28 0.029 50 0.885 178 0.888 141 1.00 –31 0.031 51 0.883 176 0.883 138 0.99 –34 0.032 51 0.888 176 0.887 135 0.97 –36 0.032 44 0.887 174 0.875 134 0.94 –38 0.035 46 0.894 173 0.885 130 0.93 –42 0.037 45 0.894 172 0.882 128 0.93 –45 0.038 37 0.905 170 0.865 125 0.91 –47 0.040 37 0.907 169 0.875 121 0.90 –50 0.040 30 0.911 168 0.864 118 0.89 –54 0.037 27 0.915 165 0.857 114 0.88 –56 0.042 31 0.917 163 0.849 111 0.87 –59 0.042 23 0.906 162 0.841 102 0.86 –66 0.040 13 0.887 160 Table 1. Common Source S–Parameters (VDS = 28 V, ID = 750 mA) (continued) MOTOROLA RF DEVICE DATA MRF3010 5 5 Page

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