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PDF MR750 Data sheet ( Hoja de datos )
| Número de pieza | MR750 | |
| Descripción | (MR750 - MR760) High Current Lead Mounted Rectifiers | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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MR750 SERIES
MR754 and MR760 are Preferred Devices
High Current Lead
Mounted Rectifiers
Features
• Current Capacity Comparable to Chassis Mounted Rectifiers
• Very High Surge Capacity
• Insulated Case
• Pb−Free Packages are Available*
Mechanical Characteristics:
• Case: Epoxy, Molded
• Weight: 2.5 grams (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal Lead
is Readily Solderable
• Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
• Polarity: Cathode Polarity Band
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http://onsemi.com
HIGH CURRENT
LEAD MOUNTED
SILICON RECTIFIERS
50 − 1000 VOLTS
DIFFUSED JUNCTION
AXIAL LEAD
BUTTON
CASE 194
STYLE 1
MARKING DIAGRAM
MR7xx AYYWWG
G
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
MR7 = Device Code
xx = 50, 51, 52, 54, 56 or 60
A = Location Code
YY = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2007
March, 2007 − Rev. 6
1
Publication Order Number:
MR750/D
1 page  
MR750 SERIES
100
70
50 TJ = 175°C
CURRENT INPUT WAVEFORM
30
TJ = 25°C
20
1.0
1000
700
500
300
200
100
70
50
30
20
10
1.0
2.0 3.0 5.0 7.0 10
20 30 50 70 100
REPETITION FREQUENCY (kHz)
Figure 9. Rectification Efficiency
TJ = 25°C
2.0 3.0 5.0 7.0 10
20 30 50 70 100
VR, REVERSE VOLTAGE (VOLTS)
Figure 11. Junction Capacitance
30
20
TJ = 25°C
10
7.0 IF = 5 A
5.0 3 A
1A
3.0
2.0
0
IR
1.0
0.1
0.2
IF
trr
0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
IR/IF, RATIO OF REVERSE TO FORWARD CURRENT
Figure 10. Reverse Recovery Time
1.0
uf
0.7
tfr
0.5
0.3
ufr
TJ = 25°C
ufr = 1.0 V
0.2
ufr = 2.0 V
0.1
1.0
2.0 3.0
5.0 7.0
IF, FORWARD PULSE CURRENT (AMP)
Figure 12. Forward Recovery Time
10
RS
RL VO
Figure 13. Single−Phase Half−Wave
Rectifier Circuit
The rectification efficiency factor σ shown in Figure 9
was calculated using the formula:
σ
+
P(dc)
P(rms)
+
V2o(dc)
RL
V2o(rms)
.100% +
V2o(dc)
V2o(ac) ) V2o(dc)
(1)
.100%
RL
For a sine wave input Vm sin (wt) to the diode, assumed
lossless, the maximum theoretical efficiency factor becomes:
V2m
σ(sine)
+
p2RL
V2m
.100%
+
4
π2
.100%
+
40.6%
4RL
(2)
For a square wave input of amplitude Vm, the efficiency
factor becomes:
V2m
σ(square)
+
2RL
V2m
.100%
+
50%
(3)
RL
(A full wave circuit has twice these efficiencies)
As the frequency of the input signal is increased, the
reverse recovery time of the diode (Figure 10) becomes
significant, resulting in an increasing AC voltage
component across RL which is opposite in polarity to the
forward current, thereby reducing the value of the efficiency
factor σ, as shown on Figure 9.
It should be emphasized that Figure 9 shows waveform
efficiency only; it does not provide a measure of diode
losses. Data was obtained by measuring the AC component
of Vo with a true rms AC voltmeter and the DC component
with a DC voltmeter. The data was used in Equation 1 to
obtain points for Figure 9.
http://onsemi.com
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet MR750.PDF ] | |
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