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PDF MRF6S21100NR1 Data sheet ( Hoja de datos )
| Número de pieza | MRF6S21100NR1 | |
| Descripción | RF Power Field Effect Transistors | |
| Fabricantes | Freescale Semiconductor | |
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Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for W- CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
tions. To be us ed in Clas s AB for PCN - PCS/c ellular radio, WLL and
TD - SCDMA applications.
•
TPPyAopuRt[email protected],C%FDuPMll rFAorbePaqeburifleiotnyrmcoyanBnCcaeCn:dDV,FCD.Dha=n2n8elVBoaltnsd, wIDidQth=
1050 mA,
= 3.84 MHz,
Power Gain — 14.5 dB
Drain Efficiency — 25.5%
IM3 @ 10 MHz Offset — - 37 dBc in 3.84 MHz Bandwidth
ACPR @ 5 MHz Offset — - 40 dBc in 3.84 MHz Bandwidth
• Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 100 Watts CW
Output Power
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
• 200°C Capable Plastic Package
• N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Document Number: MRF6S21100N
Rev. 2, 1/2007
MRF6S21100NR1
MRF6S21100NBR1
2110 - 2170 MHz, 23 W AVG., 28 V
2 x W - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 1486 - 03, STYLE 1
TO - 270 WB - 4
PLASTIC
MRF6S21100NR1
CASE 1484 - 04, STYLE 1
TO - 272 WB - 4
PLASTIC
MRF6S21100NBR1
Table 1. Maximum Ratings
Rating
Symbol
Value
Drain - Source Voltage
Gate - Source Voltage
Storage Temperature Range
Operating Junction Temperature
Table 2. Thermal Characteristics
VDSS
VGS
Tstg
TJ
- 0.5, +68
- 0.5, +12
- 65 to +175
200
Characteristic
Symbol
Value (1,2)
Thermal Resistance, Junction to Case
Case Temperature 80°C, 100 W CW
Case Temperature 73°C, 23 W CW
RθJC
0.57
0.66
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Unit
Vdc
Vdc
°C
°C
Unit
°C/W
© Freescale Semiconductor, Inc., 2007. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF6S21100NR1 MRF6S21100NBR1
1
1 page  
TYPICAL CHARACTERISTICS
15
14.8
14.6
ηD
14.4
VDD = 28 Vdc, Pout = 22.5 W (Avg.), IDQ = 1050 mA
2 −Carrier W−CDMA, 10 MHz Carrier Spacing
3.84 MHz Channel Bandwidth, PAR = 8.5 dB
@ 0.01% Probability (CCDF)
28
27
26
25
14.2
Gps
14
24
−31 −9
13.8 IM3 −34 −10
13.6 −37 −11
13.4
ACPR
−40 −12
13.2
13 IRL
− 43
− 46
2060 2080 2100 2120 2140 2160 2180 2200 2220 2240
− 13
− 14
f, FREQUENCY (MHz)
Figure 3. 2 - Carrier W - CDMA Broadband Performance @ Pout = 22.5 Watts Avg.
14.2 38
14 ηD
13.8
37
36
13.6
13.4 Gps
13.2
13 IM3
VDD = 28 Vdc, Pout = 45 W (Avg.), IDQ = 1050 mA
2 −Carrier W−CDMA, 10 MHz Carrier Spacing
3.84 MHz Channel Bandwidth, PAR = 8.5 dB
@ 0.01% Probability (CCDF)
35
34
− 24
− 26
−9
− 10
12.8 −28 −11
12.6 ACPR
−30 −12
12.4
12.2 IRL
− 32
− 34
2060 2080 2100 2120 2140 2160 2180 2200 2220 2240
− 13
− 14
f, FREQUENCY (MHz)
Figure 4. 2 - Carrier W - CDMA Broadband Performance @ Pout = 45 Watts Avg.
16
IDQ = 1575 mA
15 1312 mA
1050 mA
14
787 mA
13
12 525 mA
11
VDD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz
Two −Tone Measurements, 10 MHz Tone Spacing
10
0.1 1
10
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus
Output Power
300
− 10
VDD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz
Two −Tone Measurements, 10 MHz Tone Spacing
− 20
−30 1575 mA
IDQ = 525 mA
− 40
1312 mA
−50 1050 mA
787 mA
− 60
0.1 1 10 100 300
Pout, OUTPUT POWER (WATTS) PEP
Figure 6. Third Order Intermodulation Distortion
versus Output Power
RF Device Data
Freescale Semiconductor
MRF6S21100NR1 MRF6S21100NBR1
5
5 Page 
TYPICAL CHARACTERISTICS
− 30
3−Carrier TD−SCDMA
−35 VDD = 28 V, IDQ = 900 mA
f = 2017.5 MHz
− 40
ηD
18
Adj −U
15
Adj −L
12
−45 9
Alt − L
−50 6
−55 3
Alt − U
−60 0
0 1 2 3 4 5 6 7 89
Pout, OUTPUT POWER (WATTS) AVG.
Figure 18. 3 - Carrier TD - SCDMA ACPR, ALT and
Drain Efficiency versus Output Power
− 30
6−Carrier TD−SCDMA
− 35
VDD = 28 V, IDQ = 900 mA
f = 2017.5 MHz
ηD
18
15
− 40
−45 Adj −L
Adj −U
12
Alt−L 9
−50 6
−55 Alt−U
3
−60 0
0.5 1.5 2.5 3.5 4.5 5.5 6.5 7.5
Pout, OUTPUT POWER (WATTS) AVG.
Figure 19. 6 - Carrier TD - SCDMA ACPR, ALT and
Drain Efficiency versus Output Power
TD - SCDMA TEST SIGNAL
−30 1.28 MHz
−30 1.28 MHz
− 40
Channel BW VBW = 300 kHz
− 40
Channel BW
VBW = 300 kHz
Sweep Time = 200 ms
Sweep Time = 200 ms
− 50
RBW = 30 kHz
− 50
RBW = 30 kHz
−60 −60
− 70
−ALT2 in
−80 1.28 MHz BW
−3.2 MHz Offset
− 90
+ALT2 in
1.28 MHz BW
+3.2 MHz Offset
− 70
−ALT2 in
−80 1.28 MHz BW
−3.2 MHz Offset
− 90
+ALT2 in
1.28 MHz BW
+3.2 MHz Offset
−100 −100
− 110
−ALT1 in
−120 1.28 MHz BW
−1.6 MHz Offset
− 130
Center 2.0175 GHz
1.5 MHz
+ALT1 in
1.28 MHz BW
+1.6 MHz Offset
Span 15 MHz
f, FREQUENCY (MHz)
Figure 20. 3 - Carrier TD - SCDMA Spectrum
− 110
−ALT1 in
−120 1.28 MHz BW
−1.6 MHz Offset
− 130
Center 2.0175 GHz
2.5 MHz
+ALT1 in
1.28 MHz BW
+1.6 MHz Offset
Span 25 MHz
f, FREQUENCY (MHz)
Figure 21. 6 - Carrier TD - SCDMA Spectrum
RF Device Data
Freescale Semiconductor
MRF6S21100NR1 MRF6S21100NBR1
11
11 Page | ||
| Páginas | Total 18 Páginas | |
| PDF Descargar | [ Datasheet MRF6S21100NR1.PDF ] | |
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