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Número de pieza MC13760
Descripción GSM/DCS/TDMA/AMPS Multi-Protocol Transceiver
Fabricantes Motorola Semiconductors 
Logotipo Motorola Semiconductors Logotipo



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GSM/DCS/TDMA/AMPS
Multi-Protocol Transceiver
MC13760
The MC13760 Multi–Protocol, Multi–Band Digital Transceiver IC
combines, on a single Advanced BiCMOS chip, the major building blocks
required for next generation multi–purpose, multi–band wireless products.
The device includes the majority of the circuitry necessary for IF signal
processing between the RF front end and the DSP and backend. The
MC13760 contains two fractional–N synthesizers, a re–configurable zero IF
receiver with programmable bandwidth, receive A/D conversion, multi–rate
data interface to the baseband DSP, direct launch digital modulator, full
transmit support circuits, and general purpose support circuits such as D/A
and A/D converters, battery save and tri–state control switches.
Intended for use in a combined GSM/TDMA/AMPS/iDEN portable
wireless phone product in the 800/900/1800/1900 MHz bands. The
MC13760 can be used over a wide range of RF and IF frequencies. The
main PLL prescaler input is usable to over 2.0 GHz and the IF quadrature
downconverter operates up to 400 MHz.
The MC13760 has separate receive IF inputs and a common zero–IF IQ
receiver for TDMA and for GSM accommodating the receiver architectural
need to use different IF frequencies and filters without the need for additional
switches.
Receiver Functions for all GSM/DCS/TDMA IS–136/AMPS Modes and
Frequencies Including GPRS
Direct Interface to Motorola Baseband Processors, such as the
DSP56690 through a Common Programming and Data Interface
Main Three Accumulator (24–Bit) Fractional–N Synthesizer
Resolution Capability of 6.0 Hz
Dual–Mode Charge Pump Output for TDMA TX VCO and all RX
Independent Charge Pump Output for the GSM/DCS TX VCO
GMSK Lookup ROM for Direct Transmission in GSM/DCS Mode
Digital 16–Bit Automatic Frequency Control
Secondary Three Accumulator (24–Bit) Fractional–N Synthesizer for
use as an Accurate Frequency–Corrected Clock in GSM, or as an
Additional Low Frequency LO
Coarse Tuning of the VCO(s) via a 6–Bit D/A with Adapt
Operates at 2.75 V Deep Sleep Mode with Current as low as 50 µA
Versatile Frequency Generation including Linear and Constant Envelope
Modulation Paths, Ramp and Power Level Control, Direct Gain Control
of the RFPA in the TDMA Mode
D/A Conversion of TDMA TXI and TXQ
Reference Crystal Oscillator with a Buffered Output, Compensation/Fine
Tuning via 9–Bit D/A
Receiver Gain Adjustment and Bandwidth Down to 6.0 kHz
Programmed over the SPI Bus
A/D Conversion of RXI and RXQ to 8–Bit or 10–Bit Resolution
Types of Applications
GSM/DCS/TDMA/AMPS Global Roaming Multiband Cellular
Telephone
VHF/UHF 2–Way or Trunked Radio, iDEN, Tetra, or Satellite
Communication Radios or Telephones
Hand–Held Wireless PDA’s
Wireless LAN’s, Industrial Devices, ISM Band Products
Any New Device Containing Some Combination of the Above
Functions
MULTI–PROTOCOL
TRANSCEIVER
SEMICONDUCTOR
TECHNICAL DATA
PLASTIC PACKAGE
CASE 1285
(BGA–104)
ORDERING INFORMATION
Device
Operating
Temperature Range
Package
MC13760
TA = –40 to 85°C
BGA–104
This document contains information on a product under development. Motorola reserves the
rigMhtOtoTcOhaRnOgeLoAr dWiscIoRntEinLueEtShisSpSroEduMctIwCitOhoNuDt nUotCiceT.OR
SOLUTIONS – RF AND IF DEVICE DATA
© Motorola, Inc. 2000
Rev 0
1

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MC13760 pdf
MC13760
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BALL NAME
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ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁJ11 SRD/test_so6
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ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁK4 SFBYP
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Table 1. BGA Contact Identification (continued)
DESCRIPTION
TDMA RFPA gain control voltage output.
Supply for the crystal oscillator.
Output of the 9 bit WARP D/A to be used for compensation/correction of the
reference crystal frequency.
Digital input used to control the crystal oscillator circuit. A logic low selects the
internal oscillator. Integrated weak pulldown.
SSI RX clock in GSM mode; not used in TDMA mode.
Or scan data output for transmit power amp control module.
SSI receive data. Or scan data output for Adapt Generator module.
Low current output of the 6 bit main RX VCO Coarse Tune D/A.
Ground for the main phase detector and charge pump.
Ground for the super filter.
Bypass capacitor for the super filter. (1.0 µf)
Ground for the crystal oscillator.
Crystal oscillator base. Or scan clock input for xtal clock zone.
Supply for the main synthesizer logic, adapt control and test MUXs.
Digital input that latches in the SPI data. (Low Active)
SPI clock input.
SSI transmit data. Or scan data input for transmit.
Bit clock for TX data transfer in GSM mode. Bit clock for RX and TX data
transfer in TDMA mode. Or scan data output for reference clock Frac–N
accumulator module.
Synthesizer output to adapt the loop filter for the main PLL.
Charge pump output for the main TX LO (GSM).
Charge pump output for the main RX LO (GSM, TDMA TX and RX).
Super filter output. (45 mA max) (bypass with 0.01 µf)
TDMA RFPA bias control voltage output.
Crystal oscillator emitter.
Ground for the main synthesizer logic, adapt control and test MUXs.
Ground for the SSI and SPI serial communication ports.
SPI data input.
Digital input that starts the GSM TX modulation.
Or scan data input for MODROM module.
RX SSI frame sync in GSM mode; SSI frame sync in TDMA mode.
Or scan data output for 5 bit and 8 bit xtal clock dividers.
SIGNAL TYPE
Analog Output
Supply 2.775 V
Analog Output
Digital Input
Digital Output
Digital Output
Analog Output
Ground
Ground
Analog
Ground
RF Input
Supply 2.775 V
Digital Input
Digital Input
Digital Input
Digital Output
Analog Output
Analog Output
Analog Output
Analog Output
Analog Output
RF Output
Ground
Ground
Digital Input
Digital Input
Digital Output
MOTOROLA WIRELESS SEMICONDUCTOR
SOLUTIONS – RF AND IF DEVICE DATA
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