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Datasheet P55NF06 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | P55NF06 | STP55NF06 STB55NF06, STP55NF06, STP55NF06FP
N-channel 60 V, 0.015 Ω, 50 A STripFET™ II Power MOSFET in D²PAK, TO-220 and TO-220FP packages
Datasheet — production data
Features
Order code STB55NF06 STP55NF06 STP55NF06FP
VDSS RDS(on) max.
ID
60 V
< 0.018 Ω
50 A 50 A (1)
1. Refer to soa for the m |  ST Microelectronics | data |
| 2 | P55NF06 | N-CHANNEL POWER MOSFET TRANSISTOR 55NF06
®
Pb Free Plating Product
55NF06
Pb
N-CHANNEL POWER MOSFET TRANSISTOR
50 AMPERE 60 VOLT N-CHANNEL POWER MOSFET
DESCRIPTION
12 3 TO-251/IPAK
Thinkisemi 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistan |  Thinki Semiconductor | mosfet |
| 3 | P55NF06L | STP55NF06L STP55NF06L STB55NF06L - STB55NF06L-1
N-channel 60V - 0.014Ω - 55A TO-220/D2PAK/I2PAK STripFET™ II Power MOSFET
General features
Type STP55NF06L STB55NF06L STB55NF06L-1
VDSS 60V 60V 60V
RDS(on) <0.018Ω <0.018Ω <0.018Ω
■ Exceptional dv/dt capability ■ 100% avalanche tested ■ Appli |  STMicroelectronics | data |
P55 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | P5503QV | N & P-Channel Enhancement Mode MOSFET P5503QV
N&P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS 30V
RDS(ON) 22mΩ @VGS =10V
-30V
60mΩ @VGS = -10V
ID 7.5A -4.5A
Channel N P
SOP-8
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
CH. LIMITS
Drain-Source Voltage
N 30 V  UNIKC mosfet | | |
| 2 | P5504EDG | P-Channel Enhancement Mode MOSFET P5504EDG
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-40V
55mΩ @VGS = -10V
ID -21A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -40
Gate-Source Voltage
VGS ±20
Continuou UNIKC mosfet | | |
| 3 | P5504EDG | P-Channel Logic Level Enhancement NIKO-SEM
P-Channel Enhancement Mode Field Effect Transistor
P5504EDG
TO-252 Halogen-Free & Lead-Free
D
PRODUCT SUMMARY V(BR)DSS -40V RDS(ON) 55mΩ ID -21A
G S
1. GATE 2. DRAIN 3. SOURCE
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Drain-Source Volta  Niko-Sem data | | |
| 4 | P5504EVG | P-Channel Enhancement Mode MOSFET P5504EVG
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-40V
55mΩ @VGS = -10V
ID -6A
SOP- 08
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -40
Gate-Source Voltage
VGS ±25
Continuou UNIKC mosfet | | |
| 5 | P5504EVG | P-Channel Logic Level Enhancement Mode Field Effect Transistor NIKO-SEM
P-Channel Logic Level Enhancement
Mode Field Effect Transistor
P5504EVG
SOP-8 Lead-Free
D
PRODUCT SUMMARY V(BR)DSS -40V RDS(ON) 55m ID -5.5A 4 :GATE 5,6,7,8 :DRAIN 1,2,3 :SOURCE
G S
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDIT  Niko transistor | | |
| 6 | P5506BDG | N-Channel Enhancement Mode MOSFET P5506BDG
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
60V 55mΩ @VGS = 10V
ID 22A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 60
Gate-Source Voltage
VGS ±20
Continuous Dra UNIKC mosfet | | |
| 7 | P5506BDG | N-Channel Logic Level Enhancement Mode Field Effect Transistor NIKO-SEM
N-Channel Logic Level Enhancement
P5506BDG
Mode Field Effect Transistor
TO-252
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
60 55mΩ
ID 22A
D G
1.GATE 2.DRAIN 3.SOURCE
S
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYM Niko transistor | |
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