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PDF MRF492 Data sheet ( Hoja de datos )
| Número de pieza | MRF492 | |
| Descripción | RF POWER TRANSISTOR NPN SILICON | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MRF492 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Line
NPN Silicon
RF Power Transistor
Designed for 12.5 volt low band VHF large–signal power amplifier applica-
tions in commercial and industrial FM equipment.
• Specified 12.5 V, 50 MHz Characteristics —
Output Power = 70 W
Minimum Gain = 11 dB
Efficiency = 50%
• Load Mismatch Capability at High Line and RF Overdrive
Order this document
by MRF492/D
MRF492
70 W, 50 MHz
RF POWER
TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TC = 25°C (1)
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
Storage Temperature Range
THERMAL CHARACTERISTICS
Tstg
Characteristic
Thermal Resistance, Junction to Case (2)
Value
18
36
4.0
20
250
1.43
– 65 to +150
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
Symbol
RθJC
CASE 211–11, STYLE 1
Max Unit
0.7 °C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 100 mAdc, IB = 0)
V(BR)CEO
18
—
— Vdc
Collector–Emitter Breakdown Voltage (IC = 50 mAdc, VBE = 0)
V(BR)CES
36
—
— Vdc
Emitter–Base Breakdown Voltage (IE = 10 mAdc, IC = 0)
V(BR)EBO
4.0
—
— Vdc
Collector Cutoff Current (VCE = 13.6 Vdc, VBE = 0)
ICES
—
—
20 mAdc
ON CHARACTERISTICS
DC Current Gain (IC = 5.0 Adc, VCE = 5.0 Vdc)
hFE 10 — 150 —
DYNAMIC CHARACTERISTICS
Output Capacitance (VCB = 15 Vdc, IE = 0, f = 1.0 MHz)
FUNCTIONAL TESTS
Cob — 275 450 pF
Common–Emitter Amplifier Power Gain
(VCC = 12.5 Vdc, Pout = 70 W, f = 50 MHz)
Collector Efficiency
(VCC = 12.5 Vdc, Pout = 70 W, f = 50 MHz)
GPE 11 13 — dB
η 50 — — %
NOTES:
1. These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as RF
amplifiers.
2. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.
©MMOotoTrOolaR, OIncL.A19R94F DEVICE DATA
MRF492
1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet MRF492.PDF ] | |
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