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PDF MTB55N06Z Data sheet ( Hoja de datos )
| Número de pieza | MTB55N06Z | |
| Descripción | TMOS POWER FET 55 AMPERES 60 VOLTS | |
| Fabricantes | Motorola Semiconductors | |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Advance Information
TMOS E-FET.™
High Energy Power FET
D2PAK for Surface Mount
N–Channel Enhancement–Mode Silicon Gate
This advanced high voltage TMOS E–FET is designed to
withstand high energy in the avalanche mode and switch efficiently.
This new high energy device also offers a drain–to–source diode
with fast recovery time. Designed for high voltage, high speed
switching applications in power supplies, PWM motor controls and
other inductive loads, the avalanche energy capability is specified
to eliminate the guesswork in designs where inductive loads are
switched and offer additional safety margin against unexpected
voltage transients.
• Avalanche Energy Capability Specified at Elevated
Temperature
• Source–to–Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
• Low Stored Gate Charge for Efficient Switching
• Internal Source–to–Drain Diode Designed to Replace External
Zener Transient Suppressor–Absorbs High Energy in the
Avalanche Mode
• ESD Protected. Designed to Typically Withstand 400 V
Machine Model and 4000 V Human Body Model.
G
Order this document
by MTB55N06Z/D
MTB55N06Z
TMOS POWER FET
55 AMPERES
60 VOLTS
RDS(on) = 18 mΩ
™
D
CASE 418B–02, Style 2
D2PAK
S
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Drain–to–Source Voltage
Drain–to–Gate Voltage (RGS = 1.0 MΩ)
Gate–to–Source Voltage — Continuous
Gate–to–Source Voltage — Non–Repetitive (tp ≤ 10 ms)
Drain Current — Continuous @ TC = 25°C
Drain Current — Continuous @ TC = 100°C
Drain Current — Single Pulse (tp ≤ 10 µs)
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Total Power Dissipation @ TA = 25°C (1)
Operating and Storage Temperature Range
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C
(VDD = 25 Vdc, VDS = 60 Vdc, VGS = 10 Vdc, Peak IL = 55 Apk, L = 0.3 mH, RG = 25 Ω)
Thermal Resistance — Junction to Case
Thermal Resistance — Junction to Ambient
Thermal Resistance — Junction to Ambient (1)
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds
(1) When surface mounted to an FR4 board using the minimum recommended pad size.
Symbol
VDSS
VDGR
VGS
VGSM
ID
ID
IDM
PD
TJ, Tstg
EAS
Value
60
60
± 20
± 40
55
35.5
165
113
0.91
2.5
– 55 to 150
454
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
Watts
W/°C
°C
mJ
RθJC
RθJC
RθJA
TL
1.1 °C/W
62.5
50
260 °C
This document contains information on a new product. Specifications and information herein are subject to change without notice.
E–FET is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
REV 1
© MMoototororloa,laIncT.M19O97S Power MOSFET Transistor Device Data
1
1 page  
1.0
D = 0.5
0.2
0.1
0.1 0.05
0.02
0.01
SINGLE PULSE
0.01
0.00001
0.0001
0.001
0.01
t, TIME (seconds)
Figure 13. Thermal Response
PACKAGE DIMENSIONS
0.1
MTB55N06Z
1.0 10
C
E
BV
4
123
S
A
–T–
SEATING
PLANE
G
K
J
D 3 PL
0.13 (0.005) M T
H
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
INCHES
DIM MIN MAX
A 0.340 0.380
B 0.380 0.405
C 0.160 0.190
D 0.020 0.035
E 0.045 0.055
G 0.100 BSC
H 0.080 0.110
J 0.018 0.025
K 0.090 0.110
S 0.575 0.625
V 0.045 0.055
MILLIMETERS
MIN MAX
8.64 9.65
9.65 10.29
4.06 4.83
0.51 0.89
1.14 1.40
2.54 BSC
2.03 2.79
0.46 0.64
2.29 2.79
14.60 15.88
1.14 1.40
CASE 418B–02
ISSUE B
Motorola TMOS Power MOSFET Transistor Device Data
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet MTB55N06Z.PDF ] | |
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