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PDF MPS8598 Data sheet ( Hoja de datos )
| Número de pieza | MPS8598 | |
| Descripción | Amplifier Transistors | |
| Fabricantes | Motorola Semiconductors | |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MPS8098/D
Amplifier Transistors
COLLECTOR
3
COLLECTOR
3
2
BASE
NPN
1
EMITTER
2
BASE
PNP
1
EMITTER
MAXIMUM RATINGS
Rating
MPS8098 MPS8099
Symbol MPS8598 MPS8599 Unit
Collector – Emitter Voltage
Collector – Base Voltage
VCEO
VCBO
60 80
60 80
MPS8598
MPS8099 MPS8599
Vdc
Vdc
Emitter – Base Voltage
Collector Current – Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VEBO
IC
PD
6.0 5.0
500
625
5.0
Vdc
mAdc
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5 Watts
12 mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RqJA
200 °C/W
Thermal Resistance, Junction to Case
RqJC
83.3 °C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1)
(IC = 10 mAdc, IB = 0)
MPS8098, MPS8598
MPS8099, MPS8599
Collector – Base Breakdown Voltage
(IC = 100 µAdc, IE = 0)
MPS8098, MPS8598
MPS8099, MPS8599
Emitter – Base Breakdown Voltage
(IE = 10 µAdc, IC = 0)
MPS8098, MPS8099
MPS8598, MPS8599
Collector Cutoff Current
(VCE = 60 Vdc, IB = 0)
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0)
(VCB = 80 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 6.0 Vdc, IC = 0)
(VEB = 4.0 Vdc, IC = 0)
v1. Pulse Test: Pulse Width 300 ms, Duty Cycle = 2.0%.
MPS8098, MPS8598
MPS8099, MPS8599
MPS8098, MPS8099
MPS8598, MPS8599
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
© Motorola, Inc. 1996
NPN
MPS8098
MPS8099*
PNP
MPS8598
MPS8599*
Voltage and current are negative
for PNP transistors
*Motorola Preferred Device
1
23
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
Symbol
Min
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICES
ICBO
IEBO
60
80
60
80
6.0
5.0
—
—
—
—
—
Max Unit
Vdc
—
—
Vdc
—
—
Vdc
—
—
0.1 µAdc
µAdc
0.1
0.1
µAdc
0.1
0.1
1
1 page  
NPN MPS8098 MPS8099 PNP MPS8598 MPS8599
NPN
PNP
2.0 2.0
TJ = 25°C
1.6
IC = IC =
20 mA 50 mA
IC =
100 mA
IC =
200 mA
1.6
IC =
10 mA
IC =
20 mA
IC =
50 mA
IC = IC =
100 mA 200 mA
1.2 1.2
0.8 0.8
0.4
IC =
10 mA
0
0.02 0.05
0.1
0.2 0.5 1.0 2.0
IB, BASE CURRENT (mA)
5.0 10 20
Figure 14. MPS8098/99 Collector Saturation
Region
0.4
TJ = 25°C
0
0.02 0.05 0.1
0.2 0.5 1.0 2.0
IB, BASE CURRENT (mA)
5.0 10 20
Figure 15. MPS8598/99 Collector Saturation
Region
–1.0 –1.0
–1.4 –1.4
–1.8
RqVB FOR VBE
–2.2
–55°C TO 125°C
–1.8 RqVB FOR VBE
–55°C TO 125°C
–2.2
–2.6 –2.6
–3.0
0.2
0.5 1.0 2.0 5.0 10 20 50 100 200
IC, COLLECTOR CURRENT (mA)
Figure 16. MPS8098/99 Base–Emitter
Temperature Coefficient
–3.0
0.2
0.5 1.0 2.0 5.0 10 20 50 100 200
IC, COLLECTOR CURRENT (mA)
Figure 17. MPS8598/99 Base–Emitter
Temperature Coefficient
1.0
0.7 D = 0.5
0.5
0.2
0.3
0.2 0.1
0.05
0.1
0.07 SINGLE PULSE
0.05
0.03
0.02
0.02 0.01
SINGLE PULSE
0.01
1.0 2.0
5.0 10
20
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
ZθJC(t) = r(t) • RθJC
TJ(pk) – TC = P(pk) ZθJC(t)
ZθJA(t) = r(t) • RθJA
TJ(pk) – TA = P(pk) ZθJA(t)
D CURVES APPLY FOR
POWER PULSE TRAIN
SHOWN READ TIME AT t1
(SEE AN469)
50 100 200
500 1.0 k 2.0 k
5.0 k 10 k 20 k
50 k 100 k
t, TIME (ms)
Figure 18. MPS8098, MPS8099, MPS8598 and MPS8599 Thermal Response
Motorola Small–Signal Transistors, FETs and Diodes Device Data
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet MPS8598.PDF ] | |
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