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PDF MMBT6027 Data sheet ( Hoja de datos )
| Número de pieza | MMBT6027 | |
| Descripción | Silicon programmable unijunction transistor (PUTs) | |
| Fabricantes | ETC | |
| Logotipo |  |
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MMBT6027
Silicon programmable unijunction transistor (PUT′s)
in package SOT-23
0.5 max
3
1.2 max
1
1.9
3.1 max
2
Pinouts:
1- Anode, 2- Cathode, 3- Gate
Symbol
VAK
VGKF
VGKR
VGAR
IT
ITRM
PT
Ratings (T A = 25°C)
Parameter, units
*Anode to cathode voltage, V
*Gate to cathode forward voltage, V
*Gate to cathode reverse voltage, V
*Gate to anode reverse voltage, V
*DC forward anode current, mA
Repetitive peak forward current, A
100µs Pulse width, 1% duty cycle
*20µs Pulse width, 1% duty cycle
*Power dissipation, mW
* - Anode positive, RGA =1000Ω;
Anode negative, RGA=open
Limits
±40
40
-5
40
150
1
2
300
Symbol
IP
IGAO
IGKS
VF
VO
VT
IV
tR
Electrical Characteristics (T A = 25°C)
Parameter, units,
Limits
test conditions
min typ
Peak current, µA,
VS=10V, RG=10kΩ
Gate to anode leakage current, nA,
VS=40V, cathode open
Gate to cathode leakage current, nA,
VS=40V, anode to cathode shorted
Forward voltage, V,
IF=50mA Peak
Peak output voltage, V,
VG=20V, CC=0.2 µF
Offset voltage, V
VS=10V, RG=10kΩ
Valley current, µA,
VS=10V, RG=10kΩ
Pulse voltage rise time, ns
UB=20V, CC =0.2 µF
6
0.2
70
4
1
5
0.8
11
0.35
150
40
max
5
10
50
1.5
0.6
80
Planeta
Electronic company
JSC Planeta, 2/13, Fedorovsky Ruchei, Veliky Novgorod, 173004, Russia
http://www.planetasemi.com
1 page | ||
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| PDF Descargar | [ Datasheet MMBT6027.PDF ] | |
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