(PDF) 2SK3076S Datasheet - Silicon N Channel MOS FET High Speed Power Switching

Número de pieza	2SK3076S
Descripción	Silicon N Channel MOS FET High Speed Power Switching
Fabricantes	Hitachi Semiconductor
Logotipo
Hay una vista previa y un enlace de descarga de 2SK3076S (archivo pdf) en la parte inferior de esta página. Total 9 Páginas
No Preview Available ! 2SK3076(L),2SK3076(S) Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance • High speed switching • Low drive current. • Built-in fast recovery diode (trr=120 ns) Outline LDPAK D G S ADE-208-656 (Z) 1st. Edition Jun 1998 44 1 2 3 1 2 3 1. Gate 2. Drain 3. Source 4. Drain 1 page 5000 Body–Drain Diode Reverse Recovery Time 2000 1000 di / dt = 100 A / µs VGS = 0, Ta = 25 °C PulseTest 500 200 100 50 0.2 0.5 1 2 5 10 20 Reverse Drain Current I DR (A) 2SK3076(L),2SK3076(S) 5000 1000 100 Typical Capacitance vs. Drain to Source Voltage Ciss VGS = 0 f = 1 MHz Coss Crss 10 5 0 10 20 30 40 50 Drain to Source Voltage V DS (V) Dynamic Input Characteristics 500 ID=7A VDD = 100 V 400 250 V 400 V VDS 300 VGS 200 20 16 12 8 100 0 VDD = 400 V 250 V 100 V 8 16 24 32 Gate Charge Qg (nc) 4 0 40 Switching Characteristics 500 200 100 50 20 10 5 0.2 t d(off) tf t r t d(on) VGS = 10 V, V DD = 30 V PW = 2 µs, duty < 1 % 0.5 1 2 5 10 20 Drain Current I D (A) 5 5 Page

Páginas	Total 9 Páginas
PDF Descargar	[ Datasheet 2SK3076S.PDF ]

Número de pieza	Descripción	Fabricantes
SLA6805M	High Voltage 3 phase Motor Driver IC.	Sanken
SDC1742	12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.	Analog Devices

PDF 2SK3076S Data sheet ( Hoja de datos )