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PDF 2SK241 Data sheet ( Hoja de datos )

Número de pieza 2SK241
Descripción Silicon N Channel MOS Type Field Effect Transistor
Fabricantes Toshiba Semiconductor　
Logotipo Toshiba Semiconductor Logotipo



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No Preview Available ! 2SK241 Hoja de datos, Descripción, Manual

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK241
2SK241
FM Tuner, VHF and RF Amplifier Applications
Unit: mm
• Low reverse transfer capacitance: Crss = 0.035 pF (typ.)
• Low noise figure: NF = 1.7dB (typ.)
• High power gain: GPS = 28dB (typ.)
• Recommend operation voltage: 5~15 V
Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Gate-source voltage
Drain current
Drain power dissipation
Channel temperature
Storage temperature range
Symbol
VDS
VGS
ID
PD
Tch
Tstg
Rating
20
±5
30
200
125
−55~125
Unit
V
V
mA
mW
°C
°C
Electrical Characteristics (Ta = 25°C)
JEDEC
―
JEITA
―
TOSHIBA
2-4E1D
Weight: 0.13 g (typ.)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Gate leakage current
Drain-source voltage
Drain current
Gate-source cut-off voltage
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Power gain
Noise figure
IGSS
VDSX
IDSS
VGS (OFF)
Yfs
Ciss
Crss
Gps
NF
VDS = 0, VGS = ±5 V
VGS = −4 V, ID = 100 µA
VDS = 10 V, VGS = 0
VDS = 10 V, ID = 100 µA
VDS = 10 V, VGS = 0, f = 1 kHz
(Note)
VDS = 10 V, VGS = 0, f = 1 MHz
VDS = 10 V, VGS = 0,
f = 100 MHz (Figure 1)
20
1.5
10
3.0
0.035
28
1.7
±50
14
−2.5
0.050
3.0
nA
V
mA
V
mS
pF
pF
dB
dB
Note: IDSS classification O: 1.5~3.5, Y: 3.0~7.0, GR: 6.0~14.0
1 2003-03-27

1 page




2SK241 pdf
2SK241
5 2003-03-27

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