|
|
PDF BSH101 Data sheet ( Hoja de datos )
| Número de pieza | BSH101 | |
| Descripción | N-channel enhancement mode MOS transistor | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de BSH101 (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
|
No Preview Available !
DISCRETE SEMICONDUCTORS
DATA SHEET
andbook, halfpage
M3D088
BSH101
N-channel enhancement mode
MOS transistor
Product speciÞcation
Supersedes data of 1997 Nov 28
File under Discrete Semiconductors, SC13b
2000 Jul 19
1 page  
Philips Semiconductors
N-channel enhancement mode
MOS transistor
Product specification
BSH101
CHARACTERISTICS
Tj = 25 °C unless otherwise speciÞed.
SYMBOL
PARAMETER
V(BR)DSS
VGSth
IDSS
IGSS
RDSon
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
gate leakage current
drain-source on-state resistance
Ciss
Coss
Crss
QG
QGS
QGD
input capacitance
output capacitance
reverse transfer capacitance
total gate charge
gate-source charge
gate-drain charge
Switching times
td(on)
turn-on delay time
tf fall time
ton turn-on switching time
td(off)
turn-off delay time
tr rise time
toff turn-off switching time
Source-drain diode
VSD source-drain diode forward
voltage
trr reverse recovery time
CONDITIONS
VGS = 0; ID = 10 µA
VGS = VDS; ID = 1 mA
VGS = 0; VDS = 48 V
VGS = ±20 V; VDS = 0
VGS = 10 V; ID = 0.35 A
VGS = 4.5 V; ID = 0.175 A
VGS = 0; VDS = 48 V; f = 1 MHz
VGS = 0; VDS = 48 V; f = 1 MHz
VGS = 0; VDS = 48 V; f = 1 MHz
VGS = 10 V; VDD = 30 V;
ID = 0.35 A; Tamb = 25 °C
VDD = 30 V; ID = 0.35 A;
Tamb = 25 °C
VDD = 30 V; ID = 0.35 A;
Tamb = 25 °C
VGS = 0 to 10 V; VDD = 30 V;
ID = 0.35 A; Rgen = 6 Ω
VGS = 0 to 10 V; VDD = 30 V;
ID = 0.35 A; Rgen = 6 Ω
VGS = 0 to 10 V; VDD = 30 V;
ID = 0.35 A; Rgen = 6 Ω
VGS = 10 to 0 V; VDD = 30 V;
ID = 0.35 A; Rgen = 6 Ω
VGS = 10 to 0 V; VDD = 30 V;
ID = 0.35 A; Rgen = 6 Ω
VGS = 10 to 0 V; VDD = 30 V;
ID = 0.35 A; Rgen = 6 Ω
VGD = 0; IS = 0.5 A
IS = 0.5 A; di/dt = −10 A/µs
MIN.
60
1
−
−
−
−
−
−
−
−
TYP.
−
−
−
−
−
−
72.2
11.3
3.6
2130
MAX. UNIT
−V
−V
100 nA
±100 nA
0.81 Ω
0.93 Ω
− pF
− pF
− pF
− pC
− 150 − pC
− 695 − pC
− 3.5 − ns
− 3.5 − ns
− 7 − ns
− 9 − ns
− 4.5 − ns
− 13.5 − ns
−−1V
− 35 − ns
2000 Jul 19
5
5 Page 
Philips Semiconductors
N-channel enhancement mode
MOS transistor
NOTES
Product specification
BSH101
2000 Jul 19
11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet BSH101.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| BSH101 | N-channel enhancement mode MOS transistor | NXP Semiconductors |
| BSH102 | N-channel enhancement mode MOS transistor | NXP Semiconductors |
| BSH103 | N-channel enhancement mode MOS transistor | NXP Semiconductors |
| BSH104 | N-channel enhancement mode MOS transistor | NXP Semiconductors |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |