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PDF MPS5172 Data sheet ( Hoja de datos )
| Número de pieza | MPS5172 | |
| Descripción | AMPLIFIER TRANSISTOR | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
@Total Device Dissipation T^ = 25°C
Derate above 25°C
@Total Device Dissipation Tq = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
VCEO
VCBO
v EBO
"C
PD
Pd
Tj. Tst g
Value
25
25
5.0
100
625
5.0
1.5
12
-55 to +150
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Watts
mW/°C
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Symbol
Rfljc
R&JA
Max
83.3
200
Unit
°c/w
°c/w
MPS5172
CASE 29-02, STYLE 1
TO-92 (TO-226AA)
AMPLIFIER TRANSISTOR
NPN SILICON*
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.;
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
dC = 10 mAdc, Ib = 0)
Collector Cutoff Current
(VC B = 25 Vdc, Ie = 0)
(Vqb = 25 Vdc, l£ = 0, Ta = 100°C)
Collector Cutoff Current
(V CE = 25 Vdc, V B E = 0)
Emitter Cutoff Current
(V B e = 5.0 Vdc, lc = 0)
ON CHARACTERISTICS
DC Current Gaind)
dC = 10 mAdc, Vqe = 10 Vdc)
Collector-Emitter Saturation Voltage
flC = 10 mAdc, Ib = 1.0 mAdc)
Base-Emitter Saturation Voltage
dC = 10 mAdc, Ib = 1.0 mAdc)
Base-Emitter On Voltage
flC = 10 mAdc, VC e = 10 Vdc)
SMALL-SIGNAL CHARACTERISTICS
—Current-Gain Bandwidth Product
dC = 2.0 mAdc, Vce = 5.0 Vdc)
Collector-Base Capacitance
(Vcb = 0, El = 0, f = 1.0 MHz)
Small-Signal Current Gain
dC = 10 mAdc, V C e = 1° Vdc, f => 1.0 kHz)
(1) Pulse Test: Pulse Width « 300 jis. Duty Cycle « 2.0%.
Symbol
v (BR)CEO
'CBO
'CES
!EBO
Min Typ Max
|
J
25 — —
.
- - 100
10
— — 100
— — 100
—"FE 100
500
v CE(sat)
—
— 0.25
VBE(sat)
—
0.75
—
—VBE(on)
0.5
1.2
— —fT 120
—c cb
1.6
10
—hfe 100
750
Unit
Vdc
nAdc
/±Adc
nAdc
nAdc
—
Vdc
Vdc
Vdc
MHz
pF
—
2-203
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet MPS5172.PDF ] | |
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