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PDF MPS5172 Data sheet ( Hoja de datos )

Número de pieza MPS5172
Descripción General Purpose Transistor
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MPS5172
General Purpose Transistor
NPN Silicon
Features
Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current − Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Symbol
VCEO
VCBO
VEBO
IC
PD
Value
25
25
5.0
100
625
5.0
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Total Power Dissipation @ TA = 60°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD 450 mW
PD 1.5 W
12 mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg −55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient RqJA
200 °C/W
Thermal Resistance, Junction−to−Case
RqJC
83.3 °C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not normal
operating conditions) and are not valid simultaneously. If these limits are exceeded,
device functional operation is not implied, damage may occur and reliability may
be affected.
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COLLECTOR
3
2
BASE
1
EMITTER
TO−92 (TO−226)
1
2
CASE 29
3 STYLE 1
MARKING DIAGRAM
MPS
5172
AYWW G
G
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2005
December, 2005 − Rev. 2
1
MPS5172 = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
MPS5172
MPS5172G
MPS5172RLRM
MPS5172RLRMG
Package
Shipping
TO−92
5000 / Bulk
TO−92
(Pb−Free)
5000 / Bulk
TO−92 2000/Ammo Pack
TO−92 2000/Ammo Pack
(Pb−Free)
Publication Order Number:
MPS5172/D

1 page




MPS5172 pdf
MPS5172
1.0
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
0.1
0.07 0.05
0.05
0.02
0.03
0.02 0.01
SINGLE PULSE
0.01
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0
P(pk)
FIGURE 9
t1
t2
DUTY CYCLE, D = t1/t2
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1 (SEE AN−569)
ZqJA(t) = r(t) RqJA
TJ(pk) − TA = P(pk) ZqJA(t)
5.0 10 20 50 100 200
t, TIME (ms)
500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k
Figure 8. Thermal Response
104 DESIGN NOTE: USE OF THERMAL RESPONSE DATA
VCC = 30 Vdc
103
A train of periodical power pulses can be represented by
the model as shown in Figure 9. Using the model and the de-
102 ICEO vice thermal response the normalized effective transient
thermal resistance of Figure 8 was calculated for various
101 duty cycles.
To find ZqJA(t), multiply the value obtained from Figure
100 ICBO 8 by the steady state value RqJA.
AND Example:
10−1
ICEX @ VBE(off) = 3.0 Vdc
The MPS3904 is dissipating 2.0 watts peak under the follow-
ing conditions:
10−2 t1 = 1.0 ms, t2 = 5.0 ms. (D = 0.2)
−40 −20 0 + 20 + 40 + 60 + 80 + 100 + 120 + 140 + 160 Using Figure 8 at a pulse width of 1.0 ms and D = 0.2, the
TJ, JUNCTION TEMPERATURE (°C)
reading of r(t) is 0.22.
Figure 10.
The peak rise in junction temperature is therefore
DT = r(t) x P(pk) x RqJA = 0.22 x 2.0 x 200 = 88°C.
For more information, see ON Semiconductor Applica-
tion Note AN569/D, available from the Literature Distribu-
400 tion Center or on our website at www.onsemi.com.
200 1.0 ms 100 ms
10 ms
100
TC = 25°C
1.0 s
The safe operating area curves indicate IC−VCE limits
60
TA = 25°C
dc
of the transistor that must be observed for reliable operation.
Collector load lines for specific circuits must fall below the
40 dc limits indicated by the applicable curve.
20
10
6.0
4.0
2.0
TJ = 150°C
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
4.0 6.0 8.0 10
20
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
The data of Figure 11 is based upon TJ(pk) = 150°C; TC or
TA is variable depending upon conditions. Pulse curves are
valid for duty cycles to 10% provided TJ(pk) 150°C. TJ(pk)
may be calculated from the data in Figure 8. At high case or
ambient temperatures, thermal limitations will reduce the
40 power that can be handled to values less than the limitations
imposed by second breakdown.
Figure 11.
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