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PDF MRF8004 Data sheet ( Hoja de datos )
| Número de pieza | MRF8004 | |
| Descripción | RF AMPLIFIER TRANSISTOR | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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MRF8004
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
Total Device Dissipation
@TC = 25°C(1)
Derate above 25°C
vCEO
VCBO
v EBO
'C
PD
30
60
3.0
1.0
5.0
28.6
Vdc
Vdc
Vdc
Adc
Watts
mW/°C
Storage Temperature
T stg
- 65 to + 200
°C
(1) This device is designed for RF operation. The total device dissipation rating
applies only when the device is operated as an RF amplifier.
CASE 79-02, STYLE 1
TO-39 (TO-205AD)
RF AMPLIFIER TRANSISTOR
NPN SILICON
ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
C(l = 50 mAdc, Ib = 0)
Collector-Emitter Breakdown Voltage
(lC = 200 mAdc, Vbe = 0)
Emitter-Base Breakdown Voltage
(IE = 1.0 mAdc, lc = 0)
Collector Cutoff Current
(VC b = 15 Vdc, El = 0)
ON CHARACTERISTICS
DC Current Gain
(lC = 400 mAdc, VC e = 2.0 Vdc)
Symbol
Min
V(BR)CEO
V(BR)CES
v (BR)EBO
!CBO
30
60
3.0
—
hFE 10
Typ
Max
|
Unit
|
j
— — Vdc
— — Vdc
— — Vdc
— 0.01 mAdc
———
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
(Vcb = 12.5 Vdc, l£ = 0, f = 1.0 MHz)
—C bo
35 70 PF
FUNCTIONAL TEST
Common-Emitter Amplifier Power Gain (See Figure 1)
(Pout = 3.5 W, Vcc = 12.5 Vdc, f = 27 MHz)
Collector Efficiency(2) (See Figure 1)
(Pout = 3.5 W, Vcc = 12.5 Vdc, f = 27 MHz)
Percentage Up-Modulationd) (See Figure 1)
— —G PE
10
dB
—V
62.5
70
%
— — 85 — %
(f = 27 MHz)
Parallel Equivalent Input Resistance
(Pout = 3.5 W, Vcc = 12.5 Vdc, f = 27 MHz)
Parallel Equivalent Input Capacitance
— —R in 21 Ohms
— —Cin 900 pF
(Pout = 3.5 W, VCc = 12.5 Vdc, f = 27 MHz)
Parallel Equivalent Output Capacitance
< pout = 3.5 W, Vcc = 12.5 Vdc, f = 27 MHz)
C ut
—200
PF
(1) Percentage Up-Modulation is measured in the test circuit (Figure 1) by setting the Carrier Power (Pc ) to 3.5 Watts with Vcc = 1 2 - 5 Vdc
and noting the power input. Then the Peak Envelope Power (PEP) is noted after doubling the original power input to simulate driver
modulation (at a 25% duty cycle for thermal considerations) and raising the Vcc to 25 Vdc (to simulate the modulating voltage).
Percentage Up-Modulation is then determined by the relation:
Percentage Up-Modulation
(2)t, = .yiy. -ioo
(Vcc) dc)
[(f)-] 100
7-243
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