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Número de pieza | SIF50N060 | |
Descripción | N-CHANNEL POWER MOSFET | |
Fabricantes | SI Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de SIF50N060 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! 深圳深爱半导体股份有限公司
Shenzhen SI Semiconductors Co., LTD.
产品规格书
Product Specification
N-沟道功率 MOS 管/ N-CHANNEL POWER MOSFET
SIF50N060
●特点:热阻低 导通电阻低 栅极电荷低,开关速度快 输入阻抗高 符合RoHS规范
●FEATURES:■LOW THERMAL RESISTANCE ■LOW RDS(ON) TO MINIMIZE CONDUCTIVE LOSS ■LOW GATE
■CHARGE FOR FAST SWITCHING ■HIGH INPUT RESISTANCE RoHS COMPLIANT
●应用:低压高频逆变电路 同步整流 开关
●APPLICATION: ■LOW VOLTAGE,HIGH FREQUENCY INVERTERS ■SYNCHRONOUS RECTIFIER
■PRIMARY SWITCH
●最大额定值(TC=25°C)
●Absolute Maximum Ratings(Tc=25°C) TO-251S/251/252
参数
符号
额定值
单位
PARAMETER
SYMBOL VALUE UNIT
漏-源电压
Drain-source Voltage
VDS 60
V
栅-源电压
gate-source Voltage
VGS ±20
V
漏极电流
Continuous Drain Current
ID 50* A
TC=25℃
①
耗散功率
Total Power Dissipation ①
Ptot
46*
W
最高结温
Junction Temperature
Tj 150 °C
存储温度
Storage Temperature
TSTG
-55-175
°C
单脉冲雪崩能量
Single Pulse Avalanche Energy EAS 88
②
mJ
●电特性(Tc=25°C)
●Electronic Characteristics(Tc=25°C)
参数
PARAMETER
漏-源击穿电压
Drain-source Breakdown Voltage
栅极开启电压
Gate Threshold Voltage
符号
SYMBOL
BVDSS
VGS(TH)
测试条件
TEST CONDITION
VGS=0V, ID=250µA
VGS=VDS, ID=250µA
漏-源漏电流
Drain-source Leakage Current
栅极漏电流
Gate-body Leakage
Current
漏-源导通电阻
Static Drain-source On
Resistance
IDSS
IGSS
RDS(ON)
VDS =60V,
VGS =0V, Tj=25°C
VDS =60V,
VGS =0V, Tj=125°C
VGS =±20V ,VDS =0V
VGS =10V, ID=9A
跨导
Forwad Transconductance
gFS
VDS =5V, ID=9A
VDS=60V
RDS(ON)=10mΩ
ID=50A
最小值
MIN
60
典型值
TYP
68
最大值
MAX
单位
UNIT
V
1.2 1.8 2.2 V
1 µA
10 µA
±100
nA
10 13 mΩ
18 S
●订单信息/ORDERING INFORMATION:
包装形式/PACKING
TO-252&251(S)条管装/TUBE PACKING
TO-252 编带装/TAPE & REEL PACKING
订货编码/ORDERING CODE
普通塑封料/ Normal Package Material
SIF50N060 TO-251-TU 或 TO-251S-TU
或 TO-252-TU
SIF50N060 TO-252-TR
无卤塑封料/Halogen Free
SIF50N060 TO-251-TU-HF 或
TO-251S-TU-HF 或
TO-252-TU-HF
SIF50N060 TO-252-TR-HF
Si semiconductors 2015.6
1
1 page 深圳深爱半导体股份有限公司
Shenzhen SI Semiconductors Co., LTD.
产品规格书
Product Specification
符号/SYMBOL
A
A1
B
b
b1
c
c1
D
D1
E
e
L
TO-251 封装机械尺寸
TO-251 (IPAK) MECHANICAL DATA
最小值/min
2.10
0.95
0.80
0.50
0.70
0.45
0.45
6.35
5.10
5.30
2.25
7.00
典型值/nom
2.30
单位:毫米/UNIT:mm
最大值/max
2.50
1.30
1.25
0.80
0.90
0.70
0.70
6.80
5.50
6.30
2.35
9.20
Si semiconductors 2015.6
5
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet SIF50N060.PDF ] |
Número de pieza | Descripción | Fabricantes |
SIF50N060 | N-CHANNEL POWER MOSFET | SI Semiconductors |
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