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Número de pieza | EMD04N08FN | |
Descripción | Field Effect Transistor | |
Fabricantes | Excelliance MOS | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de EMD04N08FN (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
80V
D
RDSON (MAX.)
5mΩ
ID 75A G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
EMD04N08FN
LIMITS
UNIT
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, ID=70A, RG=25Ω
L = 0.05mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
±30
75
45
160
70
245
122
50
20
‐55 to 150
V
A
mJ
W
°C
100% UIS testing in condition of VD=40V, L=0.1mH, VG=10V, IL=40A, Rated VDS=80V N-CH
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
UNIT
Junction‐to‐Case
RJC
Junction‐to‐Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
2.5
°C / W
65
2017/3/7
p.1
1 page 10
Gate Charge Characteristics
I D = 20A
8
VD S = 20V
40V
EMD04N08FN
8000
6000
Capacitance Characteristics
f = 1MHz
VG S = 0 V
Ciss
6
4
2
0
0
20 40 60
Q g ‐ Gate Charge( nC )
80
4000
2000
0
0
Coss
Crss
20 40 60
VD S ‐ Drain‐Source Voltage( V )
80
1000
M a xim u m S a fe O p e ra tin g A re a
100
R d s( o n ) L im it
1 0 μ s
10
1 0 0 μs
D
1
C
0
1m
10ms
0ms
s
1 V G S = 1 0 V
S IN G LE P U LS E
R θ J C = 2 . 5 °C / W
T c = 2 5 °C
0 .1
0 .1 1
10 100
V D S , D r a i n ‐ S o u r c e V o lt a g e ( V )
600
500
400
300
200
100
0
0.01
Single Pulse Maximum Power Dissipation
Single Pulse
RTθC J= C = 2 25°. 5C° C/W
0.1 1 10 100
Single Pulse Time( sec )
1000
Transient Thermal Response Curve
100
D=0.5
0.2
10‐1 0.1
※Note :
1. RθJC(t)=2.5°C/W Max.
2. Duty Cycle, D=t1/ t2
3. TJM ‐ TC=PDM*RθJC(t)
0.05
0.02
PDM
0.01
10‐2
single pulse
t1
t2
10‐5 10‐4 10‐3 10‐2 10‐1 100 101
t1,Time( sec )
2017/3/7
p.5
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet EMD04N08FN.PDF ] |
Número de pieza | Descripción | Fabricantes |
EMD04N08FN | Field Effect Transistor | Excelliance MOS |
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