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Número de pieza | EMB60N06C | |
Descripción | Field Effect Transistor | |
Fabricantes | Excelliance MOS | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de EMB60N06C (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
60V
D
RDSON (MAX.)
60mΩ
ID 12A G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, ID=12A, RG=25Ω
L = 0.05mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
TYPICAL
Junction‐to‐Case
RJC
Junction‐to‐Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
2013/6/19
EMB60N06C
LIMITS
±20
12
8
30
12
7.2
3.6
16.6
6.6
‐55 to 150
UNIT
V
A
mJ
W
°C
MAXIMUM
7.5
80
UNIT
°C / W
p.1
1 page 10
I D = 10A
8
6
4
2
0
0
3
Gate Charge Characteristics
VD S = 15V 30V
6 9 12 15
Q g ‐ Gate Charge( nC )
18 21
1000
900
800
700
600
500
400
300
200
100
0
0
EMB60N06C
Capacitance Characteristics
f = 1MHz
V G S = 0 V
Ciss
Coss
Crss
10 20 30 40
VD S ‐ Drain‐Source Voltage( V )
50
60
Maximum Safe Operating Area
80
50
R D S (O N ) Limit
10
100μs
1ms
10ms
100ms
1s
10s
VG S = 10V
Single Pulse
R J C = 7.5° C/W
1 TC = 25° C
DC
0
01
10
VD S ‐ Drain‐Source Voltage( V )
60
Single Pulse Maximum Power Dissipation
50
Single Pulse
Rθ J C = 7.5° C/W
40 TA = 25° C
30
20
10
0
0.001
0.01 0.1 1 10
t 1 ,Time ( sec )
100 1000
1
Transient Thermal Response Curve
Duty Cycle = 0.5
0.2
0.1 0.1
0.05
0.02
0.01
0.01
Single Pulse
0.001
10 ‐4
10 ‐3
10 ‐2
10 ‐1
1
t 1 ,Time (sec)
Notes:
P DM
t1
t2
1.Duty Cycle,D =
t1
t2
2.Rθ J C =7.5° C/W
3.TJ ‐ TC = P * Rθ J C (t)
4.Rθ J C (t)=r(t) * RθJC
10 100
1000
2013/6/19
p.5
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet EMB60N06C.PDF ] |
Número de pieza | Descripción | Fabricantes |
EMB60N06A | Field Effect Transistor | Excelliance MOS |
EMB60N06C | Field Effect Transistor | Excelliance MOS |
EMB60N06CS | Field Effect Transistor | Excelliance MOS |
EMB60N06H | Field Effect Transistor | Excelliance MOS |
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