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PDF AP85L02H Data sheet ( Hoja de datos )
| Número de pieza | AP85L02H | |
| Descripción | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
| Fabricantes | Advanced Power Electronics | |
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AP85L02H/J
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low Gate Charge
▼ Simple Drive Requirement
▼ Fast Switching
Description
G
D
S
The TO-252 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP85L02J) is available for low-profile applications.
BVDSS
RDS(ON)
ID
25V
6mΩ
85A
G D S TO-252(H)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25℃
ID@TC=100℃
IDM
PD@TC=25℃
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-case
Thermal Resistance Junction-case
Rthj-amb
Thermal Resistance Junction-ambient
G
D
S
TO-251(J)
Rating
25
± 20
85
53
310
96
0.77
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Max.
Max.
Value
1.3
110
Unit
℃/W
℃/W
Data & specifications subject to change without notice
200227032
1 page  
AP85L02H/J
16
14 I D =40A
V DS =20V
12
10
8
6
4
2
0
0 20 40 60 80 100
Q G , Total Gate Charge (nC)
120
Fig 9. Gate Charge Characteristics
10000 f=1.0MHz
Ciss
1000 Coss
Crss
100
1
6 11 16 21 26 31
V DS (V)
Fig 10. Typical Capacitance Characteristics
100 3
10
T j =150 o C
1
T j =25 o C
2
1
0.1
0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5
V SD (V)
Fig 11. Forward Characteristic of
Reverse Diode
0
-50 0 50 100 150
T j , Junction Temperature( o C)
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet AP85L02H.PDF ] | |
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