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PDF MBR40H100WT Data sheet ( Hoja de datos )
| Número de pieza | MBR40H100WT | |
| Descripción | Schottky Barrier Rectifier ( Diode ) | |
| Fabricantes | Inchange Semiconductor | |
| Logotipo |  |
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Schottky Barrier Rectifier
INCHANGE Semiconductor
MBR40H100WT
FEATURES
·Low Forward Voltage
·Low Power Loss,High Efficiency
·High Surge Capability
·175℃ Operating Junction Temperature
·Pb-Free Package is Available
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
MECHANICAL CHARACTERISTICS
·Case: Epoxy, Molded
·Finish: All External Surfaces Corrosion Resistant and
Terminal Leads are Readily Solderable
·Lead Temperature for Soldering Purposes: 260℃ Max.
for 10 Seconds
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBO
L
PARAMETER
VRRM
VRWM
VR
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
IF(AV)
Average Rectified Forward Current
(Rated VR)TC= 150℃
VALUE UNIT
100 V
20 A
IFRM
Peak Repetitive Forward Current
(Rated VR,Square Wave,20kHz)TC= 145℃
40 A
Peak Forward Surge Current, 8.3 ms single
IFSM halfsine-wave superimposed on rated load 200
(JEDEC method)
A
TJ Junction Temperature
-65~175 ℃
Tstg Storage Temperature Range
-65~175 ℃
dv/dt Voltage Rate of Change (Rated VR)
10,000 V/μs
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
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| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet MBR40H100WT.PDF ] | |
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