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PDF MTB5D0P03H8 Data sheet ( Hoja de datos )
| Número de pieza | MTB5D0P03H8 | |
| Descripción | P-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | Cystech Electonics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MTB5D0P03H8 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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CYStech Electronics Corp.
Spec. No. : C965H8
Issued Date : 2014.12.12
Revised Date : 2015.03.26
Page No. : 1/ 9
P-Channel Enhancement Mode Power MOSFET
MTB5D0P03H8 BVDSS
ID@VGS=-10V, TC=25°C
ID@VGS=-10V, TA=25°C
Features
• Single Drive Requirement
• Low On-resistance
• Fast Switching Characteristic
• Pb-free lead plating and Halogen-free package
RDSON(TYP)
VGS=-10V, ID=-20A
VGS=-4.5V, ID=-17A
-30V
-90A
-22A
3.2mΩ
5.1mΩ
Symbol
MTB5D0P03H8
Outline
Pin 1
EDFN5×6
G：Gate D：Drain S：Source
Ordering Information
Device
MTB5D0P03H8-0-T6-G
Package
DFN5×6
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTB5D0P03H8
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Spec. No. : C965H8
Issued Date : 2014.12.12
Revised Date : 2015.03.26
Page No. : 5/ 9
Typical Characteristics(Cont.)
100000
Capacitance vs Drain-to-Source Voltage
10000
Ciss
1000
C oss
100
0
f=1MHz
Crss
10 20
-VDS, Drain-Source Voltage(V)
30
Threshold Voltage vs Junction Tempearture
1.4
1.2
1 ID=-1mA
0.8
0.6
0.4 ID=-250μA
0.2
-75 -50 -25 0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
Maximum Safe Operating Area
1000
RDS(ON)
Limited
100
10
100μ s
1ms
10ms
100ms
1s
1 TC=25°C, Tj=150°C,
VGS=-10V, RθJC=1.5°C/W,
single pulse
0.1
0.1
1 10
-VDS, Drain-Source Voltage(V)
DC
100
Maximum Drain Current vs Case Temperature
120
Gate Charge Characteristics
10
8
6
4
2 VDS=-24V
ID=-20A
0
0 20 40 60 80 100 120 140
Qg, Total Gate Charge(nC)
Forward Transfer Admittance vs Drain Current
100
100
10
80
60 1
40
20
VGS=-10V, Tj(max)=150°C,
RθJC=1.5°C/W, single pulse
0
25 50 75 100 125 150 175 200
TC, Case Temperature(°C)
0.1
0.01
0.001
VDS=-5V
Pulsed
Ta=25°C
0.01 0.1 1 10
-ID, Drain Current(A)
100
MTB5D0P03H8
CYStek Product Specification
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet MTB5D0P03H8.PDF ] | |
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