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PDF MMBTA517 Data sheet ( Hoja de datos )
| Número de pieza | MMBTA517 | |
| Descripción | EPITAXIAL PLANAR NPN TRANSISTOR | |
| Fabricantes | KEC | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MMBTA517 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE HIGH DARLINGTON TRANSISTOR.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
VCBO
VCEO
VEBO
IC
PC *
40
30
10
400
350
Junction Temperature
Tj 150
Storage Temperature
Tstg -55 150
* : Package Mounted On 99.5% Alumina 10 8 0.6mm.
UNIT
V
V
V
mA
mW
MMBTA517
EPITAXIAL PLANAR NPN TRANSISTOR
E
L BL
DIM MILLIMETERS
A 2.93+_ 0.20
B 1.30+0.20/-0.15
23
C 1.30 MAX
D 0.40+0.15/-0.05
E 2.40+0.30/-0.20
1 G 1.90
H 0.95
J 0.13+0.10/-0.05
K 0.00 ~ 0.10
Q
PP
L 0.55
M 0.20 MIN
N 1.00+0.20/-0.10
P7
Q 0.1 MAX
M
1. EMITTER
2. BASE
3. COLLECTOR
SOT-23
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
fT
Collector Output Capacitance
Cob
TEST CONDITION
IC=0.1mA
IC=10mA
IE=-1.0mA
VCB=40V
VEB=10V
IC=100mA, VCE=2V
IC=100mA, IB=1mA
IC=100mA, IB=10mA
IC=100mA, f=100MHz, VCE=2V
VCB=10V, f=1MHz
MIN.
40
30
10
-
-
30K
-
-
-
-
TYP.
-
-
-
-
-
-
-
1.5
220
5
MAX.
-
-
-
1
1
-
1
2
-
-
UNIT
V
V
V
A
A
V
V
MHz
pF
1999. 11. 30
Revision No : 3
1/2
1 page | ||
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