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PDF MT3S16T Data sheet ( Hoja de datos )
| Número de pieza | MT3S16T | |
| Descripción | Silicon NPN Epitaxial Planar Type Transistor | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
MT3S16T
VHF~UHF Band Oscillator and Amplifier Applications
• fT is high and current dependability is excellent.
• The Cre curve is flat.
:|S21e|2 = 4.5 dB (@ 2 V, 10 mA, 1 GHz)
:NF = 2.4 dB (@ 2 V, 10 mA, 1 GHz)
MT3S16T
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
VCBO 10 V
Collector-emitter voltage
VCEO 5 V
Emitter-base voltage
VEBO 2 V
Collector current
IC 60 mA
Base current
Collector power dissipation
IB 10 mW
PC 100 mW
TESM
1.Base
2.Emitter
3.Collector
Junction temperature
Storage temperature range
Tj 125 °C
Tstg
−55~125
°C
JEDEC
―
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
JEITA
TOSHIBA
―
2-1B1A
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
Weight: 0.0022g (typ.)
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Marking
3
T4
12
1 2007-11-01
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet MT3S16T.PDF ] | |
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| Número de pieza | Descripción | Fabricantes |
| MT3S16T | Silicon NPN Epitaxial Planar Type Transistor | Toshiba Semiconductor |
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