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PDF MT3S107FS Data sheet ( Hoja de datos )
| Número de pieza | MT3S107FS | |
| Descripción | Silicon-Germanium NPN Epitaxial Planar Type Transistor | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MT3S107FS (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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MT3S107FS
TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE
MT3S107FS
VCO BUFFER STAGE
VHF-SHF Low Noise Amplifier Application
FEATURES
• Low Noise Figure :NF=0.85dB (@f=2GHz)
• High Gain:|S21e|2= 13dB (@f=2GHz)
Marking
3 42
2
1
Unit:mm
1.0±0.05
0.8±0.05
1
3
0.1±0.05 2 0.1±0.05
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector-Current
Base-Current
Collector Power dissipation
Junction temperature
Storage temperature Range
Symbol
VCBO
VCEO
VEBO
IC
IB
PC(Note 1)
Tj
Tstg
Rating
10
4.5
1.5
20
10
100
150
−55~150
Unit
V
V
V
mA
mA
mW
°C
°C
1.BASE
2.EM IT TER
3.COLLECTOR
fSM
JEDEC
JEITA
TOSHIBA
Weight: 0.0006 g
-
-
2-1E1A
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Device mounted on a glass-epoxy PCB(1.0 cm2 x 1.0 mm (t))
1 2007-11-01
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet MT3S107FS.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| MT3S107FS | Silicon-Germanium NPN Epitaxial Planar Type Transistor | Toshiba Semiconductor |
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