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XPD54003S даташит

Функция этой детали – «Rf Power Transistors The Ldmost PlastIC Family».



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Номер в каталоге Производители Описание PDF
XPD54003S STMicroelectronics
STMicroelectronics
  RF POWER TRANSISTORS The LdmoST Plastic FAMILY

PD54003 - PD54003S RF POWER TRANSISTORS The LdmoST Plastic FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 3 W with 12 dB gain @ 500 MHz / 7.5V • NEW RF PLASTIC PACKAGE DESCRIPTION The PD5400 is a common source N-Channel, enhancement-mode, lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 7V in common source mode at frequencies of up to
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Это результат поиска, начинающийся с "54003S", "XPD540"

Номер в каталоге Производители Описание PDF
PD54003-PD54003S STMicroelectronics
STMicroelectronics

RF POWER TRANSISTORS The LdmoST Plastic FAMILY

PD54003 - PD54003S RF POWER TRANSISTORS The LdmoST Plastic FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 3 W with 12 dB gain @ 500 MHz / 7.5V • NEW RF PLASTIC PACKAGE DESCRIPTION T
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PD54003S STMicroelectronics
STMicroelectronics

RF POWER TRANSISTORS The LdmoST Plastic FAMILY

PD54003 - PD54003S RF POWER TRANSISTORS The LdmoST Plastic FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 3 W with 12 dB gain @ 500 MHz / 7.5V • NEW RF PLASTIC PACKAGE DESCRIPTION T
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PD54003S-E ST Microelectronics
ST Microelectronics

RF POWER transistor

PD54003-E PD54003S-E RF POWER transistor, LDMOST plastic family N-channel enhancement-mode, lateral MOSFETs General features ■ ■ ■ ■ Excellent thermal stability Common source configuration POUT = 3W with 12dB gain @ 500MHz New RF plastic package Powe
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0154003.DR ETC
ETC

154 Series Very Fast Acting Fuses

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DB-54003-470 STMicroelectronics
STMicroelectronics

RF POWER amplifier using 1 x PD54003 N-Channel enhancement-mode lateral MOSFETs

DB-54003-470 RF POWER amplifier using 1 x PD54003 N-Channel enhancement-mode lateral MOSFETs General feature ■ ■ ■ ■ ■ ■ ■ Excellent thermal stability Frequency: 400 - 470MHz Supply voltage: 7.5V Output power: 3W Efficiency: 50% - 53% Load mism
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DB-54003-470 ETC
ETC

HF to 2000 MHz Class AB Common Source

LDMOS in plastic packages HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications Part number PD54003 PD54008 PD55003 PD55008 PD55015 Freq. [MHz] 500 500 500 500 500 900 500 900 500 960 945 945 945 945 945 Pout [W] 3 8 3 8 15 15
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Последние обновления

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Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

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NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

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