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XPD54003S даташитФункция этой детали – «Rf Power Transistors The Ldmost PlastIC Family». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
XPD54003S | STMicroelectronics |
RF POWER TRANSISTORS The LdmoST Plastic FAMILY PD54003 - PD54003S
RF POWER TRANSISTORS The LdmoST Plastic FAMILY
PRELIMINARY DATA
N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 3 W with 12 dB gain @ 500 MHz / 7.5V • NEW RF PLASTIC PACKAGE
DESCRIPTION The PD5400 is a common source N-Channel, enhancement-mode, lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 7V in common source mode at frequencies of up to |
Это результат поиска, начинающийся с "54003S", "XPD540" |
Номер в каталоге | Производители | Описание | |
PD54003-PD54003S | STMicroelectronics |
RF POWER TRANSISTORS The LdmoST Plastic FAMILY PD54003 - PD54003S
RF POWER TRANSISTORS The LdmoST Plastic FAMILY
PRELIMINARY DATA
N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 3 W with 12 dB gain @ 500 MHz / 7.5V • NEW RF PLASTIC PACKAGE
DESCRIPTION T |
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PD54003S | STMicroelectronics |
RF POWER TRANSISTORS The LdmoST Plastic FAMILY PD54003 - PD54003S
RF POWER TRANSISTORS The LdmoST Plastic FAMILY
PRELIMINARY DATA
N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 3 W with 12 dB gain @ 500 MHz / 7.5V • NEW RF PLASTIC PACKAGE
DESCRIPTION T |
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PD54003S-E | ST Microelectronics |
RF POWER transistor
PD54003-E PD54003S-E
RF POWER transistor, LDMOST plastic family N-channel enhancement-mode, lateral MOSFETs
General features
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Excellent thermal stability Common source configuration POUT = 3W with 12dB gain @ 500MHz New RF plastic package
Powe |
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0154003.DR | ETC |
154 Series Very Fast Acting Fuses |
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DB-54003-470 | STMicroelectronics |
RF POWER amplifier using 1 x PD54003 N-Channel enhancement-mode lateral MOSFETs
DB-54003-470
RF POWER amplifier using 1 x PD54003 N-Channel enhancement-mode lateral MOSFETs
General feature
■ ■ ■ ■ ■ ■ ■
Excellent thermal stability Frequency: 400 - 470MHz Supply voltage: 7.5V Output power: 3W Efficiency: 50% - 53% Load mism |
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DB-54003-470 | ETC |
HF to 2000 MHz Class AB Common Source LDMOS in plastic packages
HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications
Part number PD54003 PD54008 PD55003 PD55008 PD55015 Freq. [MHz] 500 500 500 500 500 900 500 900 500 960 945 945 945 945 945 Pout [W] 3 8 3 8 15 15 |
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Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |