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даташит XL1225 IC Даташиты PDF

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7 XL1225   MEDIUM POWER LOW VOLTAGE TRANSISTOR

UNISONIC TECHNOLOGIES CO.,LTD. XL/ML1225 MEDIUM POWER LOW VOLTAGE TRANSISTOR  DESCRIPTION The XL1225/ML1225 silicon controlled rectifiers are high performance planner diffused PNPN devices. These parts are intended for low cost high volume applications. SCR  ORDERING INFORMATION Ordering Number Lead Free Halogen Free - XL1225G-xx-AE3-R XL1225L-xx-T92-B XL1225G-xx-T92-B XL1225L-xx-T92-K XL1225G-xx-T92-K - ML1225G-xx-AE3-R ML1225L-xx-T92-B ML1225G-xx-T92-B ML1225L-xx-T92-K ML1225G-xx-T92-K Note: Pin
Unisonic Technologies
Unisonic Technologies
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6 XL1225   Silicon Planar pnpn Thyristor

TIGER ELECTRONIC CO.,LTD TO-92 Plastic-Encapsulate Transistors XL1225 Silicon Planar pnpn Thyristor TO-92 FEATURES Current-IGT: 120 µA ITRMS: 0.6 A VDRM: 400 V 1. CATHODE 2. GATE 3. ANODE 123 Operating and storage junction temperature range TJ, Tstg : -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT On state voltage VTM ITM=0.6A 1.7 V Gate trigger voltage VGTF VAK=7V 0.8 V Repetitive peak off-state voltage VDRM
TGS
TGS
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5 XL1225   SCRs

TM HPM HAOPIN MICROELECTRONICS CO.,LTD. XL1225 SCRs Description Glass passivated, sensitive gate thyristors in a plastic envelope, intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. Symbol Simplified outline a Pin 1 2 3 TAB k g 123 TO-92 Description Cathode anode gate anode SYMBOL PARAMETER VDRM Repetitive peak off-state voltages IT RMS RMS
HAOPIN
HAOPIN
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4 XL1225   SCR

SCR XL 1225 / ML 1225 0.6A 300V (ML1225) / 400V (XL1225), IGT < 200 µA DESCRIPTION The 1225 Silicon Controlled Rectifiers are high performance diffused PNPN devices. These parts are intended for low cost and high volume applications. ABSOLUTE MAXIMUM RATING Parameter Part No. Symbol Min. Max Repetitive Peak XL 1225 VDRM 400 Off State Voltage ML 1225 VDRM 300 On-State Current IT(RMS) 0.5 Average On-State Current IT (AV) 0.5 Peak Reverse Gate Voltage Peak Gate Current Gate Dissipation Operating Temperature St
ETC
ETC
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3 XL1225   SENSITIVE GATE SILICON CONTROLLED RECTIFIERS

DC COMPONENTS CO., LTD. R DISCRETE SEMICONDUCTORS ML1225 XL1225 TECHNICAL SPECIFICATIONS OF SENSITIVE GATE SILICON CONTROLLED RECTIFIERS VOLTAGE RANGE - 300 to 380 Volts CURRENT - 0.8 Ampere Description These Silicon Controlled Rectifiers are high performance planar diffused PNPN devices. They are intended for low cost, high volume applications. Pinning 1 = Cathode 2 = Gate 3 = Anode Absolute Maximum Ratings(TA=25oC) Characteristic Symbol Rating Peak Repetitive Off-State Voltage(RGK=1KΩ) ML1225 XL1225 On-S
DC COMPONENTS
DC COMPONENTS
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2 XL1225   Thyristor

XL1225 Rev.E Mar.-2016 描述 / Descriptions TO-92 塑封封装单向可控硅。Thyristor in a TO-92 Plastic Package. 特征 / Features 低成本,高容量。 Intended for low cost high volume applications. 用途 / Applications 应用于高压控制电路。 Applied to high Voltage control circuit. 内部等效电路 / Equivalent Circuit DATA SHEET 引脚排列 / Pinning 123 PIN1:Anode PIN 2:Gate PIN 3:Cathode 放大及印章代码 / hFE Classifications & Marking 见印章说明。See Marking Instructi
BLUE ROCKET ELECTRONICS
BLUE ROCKET ELECTRONICS
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1 XL1225   TO-92 Plastic-Encapsulate Transistors

AVIC TECHNOLOGY CO.,LTD. TO-92 Plastic-Encapsulate Transistors XL1225 FEATURES TO-92 Silicon Planar pnpn Thyristor 1. CATHODE 2. GATE Current-IGT: ITRMS: VDRM: 120 0.6 400 µA 3. ANODE A 1 2 3 V Operating and storage junction temperature range TJ, Tstg : -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter On state voltage Gate trigger voltage Repetitive peak off-state voltage Holding current Symbol VTM VGTF VDRM IH A2 A1 A-1 Gate trigger current IGTF A-2 A B VAR=7V 45 60 8
Avic Technology
Avic Technology
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Fairchild Semiconductor
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