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XDUR14C4-1A даташитФункция этой детали – «Digit NumerIC Display». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
XDUR14C4-1A | Sunled |
DIGIT NUMERIC DISPLAY 14mm (0.56") FOUR DIGIT NUMERIC DISPLAY
XDUR14C4-1A
SUN LED
Email : [email protected] Web Site : www.sunled.com
Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is ±0.25(0.01") unless otherwise noted.
Absolute maximum ratings (TA=25°C) Reverse voltage Forward current Forward current (peak) 1/10Duty cycle 0.1ms pulse width Power dissipation Operating temperature Storage temperature Lead solder temperature [2mm below package base] VR IF iFS PT TA Tstg UR (GaAsP/GaP) 5 30 160 105 |
Это результат поиска, начинающийся с "14C4", "XDUR14C4" |
Номер в каталоге | Производители | Описание | |
14C40L | International Rectifier |
IRGB14C40L PD - 93891A
Ignition IGBT
Features Most Rugged in Industry Logic-Level Gate Drive > 6KV ESD Gate Protection Low Saturation Voltage High Self-clamped Inductive Switching Energy
The advanced IGBT process family includes a MOS gated, N-channel logic level device which is |
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GB14C40L | International Rectifier |
IRGB14C40L PD - 93891A
Ignition IGBT
IGBT with on-chip Gate-Emitter and Gate-Collector clamps
Features Most Rugged in Industry Logic-Level Gate Drive > 6KV ESD Gate Protection Low Saturation Voltage High Self-clamped Inductive Switching Energy
The advanced I |
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IRGB14C40L | International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR PD - 93891A
Ignition IGBT
Features Most Rugged in Industry Logic-Level Gate Drive > 6KV ESD Gate Protection Low Saturation Voltage High Self-clamped Inductive Switching Energy
The advanced IGBT process family includes a MOS gated, N-channel logic level device which is |
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IRGB14C40LPBF | International Rectifier |
IGBT PD - 95193A
Ignition IGBT
Features Most Rugged in Industry Logic-Level Gate Drive > 6KV ESD Gate Protection Low Saturation Voltage High Self-clamped Inductive Switching Energy Lead-Free Description
The advanced IGBT process family includes a MOS gated, N-channe |
|
IRGS14C40L | International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR PD - 93891A
Ignition IGBT
Features Most Rugged in Industry Logic-Level Gate Drive > 6KV ESD Gate Protection Low Saturation Voltage High Self-clamped Inductive Switching Energy
The advanced IGBT process family includes a MOS gated, N-channel logic level device which is |
|
IRGS14C40LPBF | International Rectifier |
IGBT PD - 95193A
Ignition IGBT
Features Most Rugged in Industry Logic-Level Gate Drive > 6KV ESD Gate Protection Low Saturation Voltage High Self-clamped Inductive Switching Energy Lead-Free Description
The advanced IGBT process family includes a MOS gated, N-channe |
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Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |