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XC4010E даташитФункция этой детали – «Xc4000e And Xc4000x Series Field Programmable Gate Arrays». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
XC4010E | Xilinx |
XC4000E and XC4000X Series Field Programmable Gate Arrays Product Obsolete or Under Obsolescence
0
R XC4000E and XC4000X Series Field Programmable Gate Arrays
May 14, 1999 (Version 1.6)
0 0* Product Specification
XC4000E and XC4000X Series Features
Note: Information in this data sheet covers the XC4000E, XC4000EX, and XC4000XL families. A separate data sheet covers the XC4000XLA and XC4000XV families. Electrical Specifications and package/pin information are covered in separate sections for each family to make the information easier to access, review, and print. For access |
Это результат поиска, начинающийся с "4010E", "XC40" |
Номер в каталоге | Производители | Описание | |
BS616LV4010EC | Brilliance Semiconductor |
Very Low Power/Voltage CMOS SRAM 256K X 16 bit BSI
FEATURES
Very Low Power/Voltage CMOS SRAM 256K X 16 bit
DESCRIPTION
BS616LV4010
• Very low operation voltage : 2.7 ~ 3.6V • Very low power consumption : Vcc = 3.0V C-grade: 20mA (Max.) operating current I -grade: 25mA (Max.) operating current 0.5uA (Typ.) CMOS st |
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BS616LV4010EI | Brilliance Semiconductor |
Very Low Power/Voltage CMOS SRAM 256K X 16 bit BSI
FEATURES
Very Low Power/Voltage CMOS SRAM 256K X 16 bit
DESCRIPTION
BS616LV4010
• Very low operation voltage : 2.7 ~ 3.6V • Very low power consumption : Vcc = 3.0V C-grade: 20mA (Max.) operating current I -grade: 25mA (Max.) operating current 0.5uA (Typ.) CMOS st |
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BS616UV4010EC | Brilliance Semiconductor |
Ultra Low Power/Voltage CMOS SRAM 256K X 16 bit BSI
FEATURES
Ultra Low Power/Voltage CMOS SRAM 256K X 16 bit
DESCRIPTION
BS616UV4010
• Ultra low operation voltage : 1.8 ~ 3.6V • Ultra low power consumption : Vcc = 2.0V C-grade: 15mA (Max.) operating current I-grade: 20mA (Max.) operating current 0.20uA (Typ.) CMOS |
|
BS616UV4010EC | Brilliance Semiconductor |
Ultra Low Power/Voltage CMOS SRAM 256K X 16 bit BSI
FEATURES
Ultra Low Power/Voltage CMOS SRAM 256K X 16 bit
DESCRIPTION
BS616UV4010
• Ultra low operation voltage : 1.8 ~ 3.6V • Ultra low power consumption : Vcc = 2.0V C-grade: 15mA (Max.) operating current I-grade: 20mA (Max.) operating current 0.20uA (Typ.) CMOS |
|
BS616UV4010EI | Brilliance Semiconductor |
Ultra Low Power/Voltage CMOS SRAM 256K X 16 bit BSI
FEATURES
Ultra Low Power/Voltage CMOS SRAM 256K X 16 bit
DESCRIPTION
BS616UV4010
• Ultra low operation voltage : 1.8 ~ 3.6V • Ultra low power consumption : Vcc = 2.0V C-grade: 15mA (Max.) operating current I-grade: 20mA (Max.) operating current 0.20uA (Typ.) CMOS |
|
BS616UV4010EI | Brilliance Semiconductor |
Ultra Low Power/Voltage CMOS SRAM 256K X 16 bit BSI
FEATURES
Ultra Low Power/Voltage CMOS SRAM 256K X 16 bit
DESCRIPTION
BS616UV4010
• Ultra low operation voltage : 1.8 ~ 3.6V • Ultra low power consumption : Vcc = 2.0V C-grade: 15mA (Max.) operating current I-grade: 20mA (Max.) operating current 0.20uA (Typ.) CMOS |
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Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
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