DataSheet26.com


XC4010E даташит

Функция этой детали – «Xc4000e And Xc4000x Series Field Programmable Gate Arrays».



Показать результаты поиска

scroll
Номер в каталоге Производители Описание PDF
XC4010E Xilinx
Xilinx
  XC4000E and XC4000X Series Field Programmable Gate Arrays

Product Obsolete or Under Obsolescence 0 R XC4000E and XC4000X Series Field Programmable Gate Arrays May 14, 1999 (Version 1.6) 0 0* Product Specification XC4000E and XC4000X Series Features Note: Information in this data sheet covers the XC4000E, XC4000EX, and XC4000XL families. A separate data sheet covers the XC4000XLA and XC4000XV families. Electrical Specifications and package/pin information are covered in separate sections for each family to make the information easier to access, review, and print. For access
pdf

Это результат поиска, начинающийся с "4010E", "XC40"

Номер в каталоге Производители Описание PDF
BS616LV4010EC Brilliance Semiconductor
Brilliance Semiconductor

Very Low Power/Voltage CMOS SRAM 256K X 16 bit

BSI „ FEATURES Very Low Power/Voltage CMOS SRAM 256K X 16 bit „ DESCRIPTION BS616LV4010 • Very low operation voltage : 2.7 ~ 3.6V • Very low power consumption : Vcc = 3.0V C-grade: 20mA (Max.) operating current I -grade: 25mA (Max.) operating current 0.5uA (Typ.) CMOS st
pdf
BS616LV4010EI Brilliance Semiconductor
Brilliance Semiconductor

Very Low Power/Voltage CMOS SRAM 256K X 16 bit

BSI „ FEATURES Very Low Power/Voltage CMOS SRAM 256K X 16 bit „ DESCRIPTION BS616LV4010 • Very low operation voltage : 2.7 ~ 3.6V • Very low power consumption : Vcc = 3.0V C-grade: 20mA (Max.) operating current I -grade: 25mA (Max.) operating current 0.5uA (Typ.) CMOS st
pdf
BS616UV4010EC Brilliance Semiconductor
Brilliance Semiconductor

Ultra Low Power/Voltage CMOS SRAM 256K X 16 bit

BSI „ FEATURES Ultra Low Power/Voltage CMOS SRAM 256K X 16 bit „ DESCRIPTION BS616UV4010 • Ultra low operation voltage : 1.8 ~ 3.6V • Ultra low power consumption : Vcc = 2.0V C-grade: 15mA (Max.) operating current I-grade: 20mA (Max.) operating current 0.20uA (Typ.) CMOS
pdf
BS616UV4010EC Brilliance Semiconductor
Brilliance Semiconductor

Ultra Low Power/Voltage CMOS SRAM 256K X 16 bit

BSI „ FEATURES Ultra Low Power/Voltage CMOS SRAM 256K X 16 bit „ DESCRIPTION BS616UV4010 • Ultra low operation voltage : 1.8 ~ 3.6V • Ultra low power consumption : Vcc = 2.0V C-grade: 15mA (Max.) operating current I-grade: 20mA (Max.) operating current 0.20uA (Typ.) CMOS
pdf
BS616UV4010EI Brilliance Semiconductor
Brilliance Semiconductor

Ultra Low Power/Voltage CMOS SRAM 256K X 16 bit

BSI „ FEATURES Ultra Low Power/Voltage CMOS SRAM 256K X 16 bit „ DESCRIPTION BS616UV4010 • Ultra low operation voltage : 1.8 ~ 3.6V • Ultra low power consumption : Vcc = 2.0V C-grade: 15mA (Max.) operating current I-grade: 20mA (Max.) operating current 0.20uA (Typ.) CMOS
pdf
BS616UV4010EI Brilliance Semiconductor
Brilliance Semiconductor

Ultra Low Power/Voltage CMOS SRAM 256K X 16 bit

BSI „ FEATURES Ultra Low Power/Voltage CMOS SRAM 256K X 16 bit „ DESCRIPTION BS616UV4010 • Ultra low operation voltage : 1.8 ~ 3.6V • Ultra low power consumption : Vcc = 2.0V C-grade: 15mA (Max.) operating current I-grade: 20mA (Max.) operating current 0.20uA (Typ.) CMOS
pdf

[1]   



Последние обновления

scroll
Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

pdf
NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

pdf

Index :   

A    B    C    D    E    F    G    H    I    J  

  K    L    M    N    O    P    Q

DataSheet26.com      |     2020      |     Контакты