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X20C04JMB-15 даташит

Функция этой детали – «Nonvolatile StatIC Ram».



Показать результаты поиска

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Номер в каталоге Производители Описание PDF
X20C04JMB-15 Xicor
Xicor
  Nonvolatile Static RAM

X20C04 4K X20C04 Nonvolatile Static RAM 512 x 8 Bit FEATURES DESCRIPTION The Xicor X20C04 is a 512 x 8 NOVRAM featuring a static RAM overlaid bit-for-bit with a nonvolatile electrically erasable PROM (E2PROM). The X20C04 is fabricated with advanced CMOS floating gate technology to achieve low power and wide power-supply margin. The X20C04 features the JEDEC approved pinout for bytewide memories, compatible with industry standard RAMs, ROMs, EPROMs, and E2PROMs. The NOVRAM design allows data to be easily transferred
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Это результат поиска, начинающийся с "20C04JMB", "X20C04JMB"

Номер в каталоге Производители Описание PDF
X20C04JMB Xicor
Xicor

Nonvolatile Static RAM

X20C04 4K X20C04 Nonvolatile Static RAM 512 x 8 Bit FEATURES DESCRIPTION The Xicor X20C04 is a 512 x 8 NOVRAM featuring a static RAM overlaid bit-for-bit with a nonvolatile electrically erasable PROM (E2PROM). The X20C04 is fabricated with advanced CMOS floating gate technolo
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X20C04JMB-20 Xicor
Xicor

Nonvolatile Static RAM

X20C04 4K X20C04 Nonvolatile Static RAM 512 x 8 Bit FEATURES DESCRIPTION The Xicor X20C04 is a 512 x 8 NOVRAM featuring a static RAM overlaid bit-for-bit with a nonvolatile electrically erasable PROM (E2PROM). The X20C04 is fabricated with advanced CMOS floating gate technolo
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X20C04JMB-25 Xicor
Xicor

Nonvolatile Static RAM

X20C04 4K X20C04 Nonvolatile Static RAM 512 x 8 Bit FEATURES DESCRIPTION The Xicor X20C04 is a 512 x 8 NOVRAM featuring a static RAM overlaid bit-for-bit with a nonvolatile electrically erasable PROM (E2PROM). The X20C04 is fabricated with advanced CMOS floating gate technolo
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2SA2004 Panasonic Semiconductor
Panasonic Semiconductor

Silicon PNP Epitaxial Transistor

Power Transistors 2SA2004 Silicon PNP epitaxial planer type Unit: mm For power amplification 9.9±0.3 4.6±0.2 2.9±0.2 13.7±0.2 4.2±0.2 Solder Dip • High forward current transfer ratio hFE • Satisfactory linearity of forward current transfer ratio hFE • Dielectric b
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2SK2004-01L Fuji Electric
Fuji Electric

N-channel MOS-FET

2SK2004-01L,S FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof N-channel MOS-FET 1000V 3,6Ω 4A 80W > Outline Drawing > Applications Switching Regulators UPS DC-DC
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2SK2004-01S Fuji Electric
Fuji Electric

N-channel MOS-FET

2SK2004-01L,S FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof N-channel MOS-FET 1000V 3,6Ω 4A 80W > Outline Drawing > Applications Switching Regulators UPS DC-DC
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Последние обновления

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Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

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NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

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