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X20C04EI-20 даташитФункция этой детали – «Nonvolatile StatIC Ram». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
X20C04EI-20 | Xicor |
Nonvolatile Static RAM X20C04 4K
X20C04
Nonvolatile Static RAM
512 x 8 Bit
FEATURES
DESCRIPTION
The Xicor X20C04 is a 512 x 8 NOVRAM featuring a static RAM overlaid bit-for-bit with a nonvolatile electrically erasable PROM (E2PROM). The X20C04 is fabricated with advanced CMOS floating gate technology to achieve low power and wide power-supply margin. The X20C04 features the JEDEC approved pinout for bytewide memories, compatible with industry standard RAMs, ROMs, EPROMs, and E2PROMs. The NOVRAM design allows data to be easily transferred |
Это результат поиска, начинающийся с "20C04EI", "X20C04EI" |
Номер в каталоге | Производители | Описание | |
X20C04EI | Xicor |
Nonvolatile Static RAM X20C04 4K
X20C04
Nonvolatile Static RAM
512 x 8 Bit
FEATURES
DESCRIPTION
The Xicor X20C04 is a 512 x 8 NOVRAM featuring a static RAM overlaid bit-for-bit with a nonvolatile electrically erasable PROM (E2PROM). The X20C04 is fabricated with advanced CMOS floating gate technolo |
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X20C04EI-15 | Xicor |
Nonvolatile Static RAM X20C04 4K
X20C04
Nonvolatile Static RAM
512 x 8 Bit
FEATURES
DESCRIPTION
The Xicor X20C04 is a 512 x 8 NOVRAM featuring a static RAM overlaid bit-for-bit with a nonvolatile electrically erasable PROM (E2PROM). The X20C04 is fabricated with advanced CMOS floating gate technolo |
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X20C04EI-25 | Xicor |
Nonvolatile Static RAM X20C04 4K
X20C04
Nonvolatile Static RAM
512 x 8 Bit
FEATURES
DESCRIPTION
The Xicor X20C04 is a 512 x 8 NOVRAM featuring a static RAM overlaid bit-for-bit with a nonvolatile electrically erasable PROM (E2PROM). The X20C04 is fabricated with advanced CMOS floating gate technolo |
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2SA2004 | Panasonic Semiconductor |
Silicon PNP Epitaxial Transistor Power Transistors
2SA2004
Silicon PNP epitaxial planer type
Unit: mm
For power amplification
9.9±0.3
4.6±0.2 2.9±0.2
13.7±0.2 4.2±0.2 Solder Dip
• High forward current transfer ratio hFE • Satisfactory linearity of forward current transfer ratio hFE • Dielectric b |
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2SK2004-01L | Fuji Electric |
N-channel MOS-FET 2SK2004-01L,S
FAP-IIA Series
> Features
High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof
N-channel MOS-FET
1000V
3,6Ω
4A
80W
> Outline Drawing
> Applications
Switching Regulators UPS DC-DC |
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2SK2004-01S | Fuji Electric |
N-channel MOS-FET 2SK2004-01L,S
FAP-IIA Series
> Features
High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof
N-channel MOS-FET
1000V
3,6Ω
4A
80W
> Outline Drawing
> Applications
Switching Regulators UPS DC-DC |
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Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
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NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |