|
WTD9973 даташитФункция этой детали – «Surface Mount N-channel Enhancement Mode Power Mosfet». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
WTD9973 | Weitron Technology |
Surface Mount N-Channel Enhancement Mode POWER MOSFET WTD9973
Surface Mount N-Channel Enhancement Mode POWER MOSFET 3 DRAIN
P b Lead(Pb)-Free
1 GATE
DRAIN CURRENT 14 AMPERES DRAIN SOURCE VOLTAGE 60 VOLTAGE
*Super High Dense Cell Design For Low R DS(ON) R DS(ON) <80mΩ@V GS =10V *Simple Drive Requirement *Lower On-resistance *Fast Switching Characteristic *TO-252 Package
Features:
SOURCE
2
4 1 1. GATE 2.4 DRAIN 3. SOURCE 2
3
D-PAK / (TO-252)
Maximum Ratings(T =25 C Unless Otherwise Specified)
A
Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Curr |
Это результат поиска, начинающийся с "9973", "WTD9" |
Номер в каталоге | Производители | Описание | |
AD9973 | Analog Devices |
14-Bit CCD Signal Processor Dual-Channel, 14-Bit CCD Signal Processor with Precision Timing™ Core AD9973
FEATURES
1.8 V analog and digital core supply voltage Serial data link with reduced range LVDS outputs Correlated double sampler (CDS) with −3 dB, 0 dB, +3 dB, +6 dB gain 6 dB to 42 dB, 10-bit variab |
|
AP9973GH | Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET AP9973GH/J
Pb Free Plating Product
Advanced Power Electronics Corp.
▼ Low Gate Charge ▼ Single Drive Requirement ▼ Surface Mount Package G S D
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
60V 80mΩ 14A
Description
The Advanced Power MOSFETs from APEC provid |
|
AP9973GH-HF | Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET AP9973GH/J-HF
Halogen-Free Product
Advanced Power Electronics Corp.
▼ Low Gate Charge ▼ Single Drive Requirement ▼ Surface Mount Package ▼ RoHS Compliant & Halogen-Free G S
N-CHANNEL ENHANCEMENT MODE POWER MOSFET D
BVDSS RDS(ON) ID
60V 80mΩ 14A
Description
Advanced |
|
AP9973GH-HF-3 | Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics Corp.
AP9973GH/J-HF-3
N-channel Enhancement-mode Power MOSFET
Simple Drive Requirement Supports 4.5V Logic-level Gate Drive Low Gate Charge RoHS-compliant, halogen-free G S D
BV DSS R DS(ON) ID
60V 80mΩ 14A
Description
Advanced Power MOSFETs from |
|
AP9973GI | Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET AP9973GI
RoHS-compliant Product
Advanced Power Electronics Corp.
▼ Fast Switching Performance ▼ Single Drive Requirement ▼ Full Isolation Package G S D
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
60V 80mΩ 14A
Description
Advanced Power MOSFETs from APEC p |
|
AP9973GJ | Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET AP9973GH/J
Pb Free Plating Product
Advanced Power Electronics Corp.
▼ Low Gate Charge ▼ Single Drive Requirement ▼ Surface Mount Package G S D
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
60V 80mΩ 14A
Description
The Advanced Power MOSFETs from APEC provid |
[1]  
Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |