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UPM1J182MHD даташит

Функция этой детали – «Aluminum ElectrolytIC Capacitor».



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UPM1J182MHD Nichicon
Nichicon
  Aluminum Electrolytic Capacitor

ALUMINUM ELECTROLYTIC CAPACITORS PM Extremely Low Impedance, High Reliability series High reliability withstanding 5000 hour load life at +105°C (3000/2000 hours for smaller case sizes as specified below). Capacitance ranges available based on the numerical values in E12 series under JIS. Compliant to the RoHS directive (2002/95/EC). (through 100V only) PM Smaller Specifications PW Item Performance Characteristics Category Temperature Range Rated Voltage Range Rated Capacitance Range Capacitance Tolerance Leakage
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Это результат поиска, начинающийся с "1J182MHD", "UPM1J182"

Номер в каталоге Производители Описание PDF
UPJ1J182MHD Nichicon
Nichicon

Aluminum Electrolytic Capacitor

ALUMINUM ELECTROLYTIC CAPACITORS PJ Low Impedance, For Switching Power Supplies series Low impedance and high reliability withstanding 5000 hours load life at +105˚C (3000 / 2000 hours for smaller case sizes as specified below). Capacitance ranges available based on the numer
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2DB1182Q Diodes
Diodes

32V PNP MEDIUM POWER TRANSISTOR

Features  BVCEO > -32V  IC = -2A High Continuous Collector Current  ICM = -3A Peak Pulse Current  Epitaxial Planar Die Construction  Low Collector-Emitter Saturation Voltage  Ideal for Medium Power Switching or Amplification Applications  Totally Lead-Free &
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2SA1182 Toshiba Semiconductor
Toshiba Semiconductor

Silicon PNP Epitaxial Transistor

TOSHIBA Transistor Silicon PNP Epitaxial (PCT process) 2SA1182 2SA1182 Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications Unit: mm • Excellent hFE linearity: hFE (2) = 25 (min) at VCE = −6 V, IC = −400 mA • Comp
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2SA1182-HF Kexin
Kexin

PNP Transistors

SMD Type Transistors PNP Transistors 2SA1182-HF SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 +0.22.8 -0.1 ■ Features ● Collector Current Capability IC=-0.5A ● Collector Emitter Voltage VCEO=-32V ● Complementary to 2SC2859-HF. ● Pb−Free Package May be Available. The G�
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2SB1182 ROHM Semiconductor
ROHM Semiconductor

Medium power Transistor

Medium power transistor (32V, 2A) 2SB1182 / 2SB1240 Features 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2) Complements 2SD1758 / 2SD1862. Structure Epitaxial planar type PNP silicon transistor Dimensions (Unit : mm) 2SB1182 6.5±0.2 5.1
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2SB1182 Inchange Semiconductor
Inchange Semiconductor

Silicon PNP Power Transistor

isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB1182 DESCRIPTION ·Small and slim package ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power dissipation ABSOLUTE MAXIMUM RATINGS(Ta=25�
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Последние обновления

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2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

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NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

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