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UPM1J182MHD даташитФункция этой детали – «Aluminum ElectrolytIC Capacitor». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
UPM1J182MHD | Nichicon |
Aluminum Electrolytic Capacitor ALUMINUM ELECTROLYTIC CAPACITORS
PM Extremely Low Impedance, High Reliability series
High reliability withstanding 5000 hour load life at +105°C (3000/2000 hours for smaller case sizes as specified below). Capacitance ranges available based on the numerical values in E12 series under JIS. Compliant to the RoHS directive (2002/95/EC).
(through 100V only)
PM
Smaller
Specifications
PW
Item
Performance Characteristics
Category Temperature Range Rated Voltage Range Rated Capacitance Range Capacitance Tolerance
Leakage |
Это результат поиска, начинающийся с "1J182MHD", "UPM1J182" |
Номер в каталоге | Производители | Описание | |
UPJ1J182MHD | Nichicon |
Aluminum Electrolytic Capacitor ALUMINUM ELECTROLYTIC CAPACITORS
PJ Low Impedance, For Switching Power Supplies series
Low impedance and high reliability withstanding 5000 hours load life
at +105˚C (3000 / 2000 hours for smaller case sizes as specified below).
Capacitance ranges available based on the numer |
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2DB1182Q | Diodes |
32V PNP MEDIUM POWER TRANSISTOR Features
BVCEO > -32V IC = -2A High Continuous Collector Current ICM = -3A Peak Pulse Current Epitaxial Planar Die Construction Low Collector-Emitter Saturation Voltage Ideal for Medium Power Switching or Amplification Applications Totally Lead-Free & |
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2SA1182 | Toshiba Semiconductor |
Silicon PNP Epitaxial Transistor TOSHIBA Transistor Silicon PNP Epitaxial (PCT process)
2SA1182
2SA1182
Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications
Unit: mm
• Excellent hFE linearity: hFE (2) = 25 (min) at VCE = −6 V, IC = −400 mA
• Comp |
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2SA1182-HF | Kexin |
PNP Transistors SMD Type
Transistors
PNP Transistors 2SA1182-HF
SOT-23-3
2.9 +0.2 -0.1
0.4 +0.1 -0.1
3
+0.22.8 -0.1
■ Features
● Collector Current Capability IC=-0.5A ● Collector Emitter Voltage VCEO=-32V ● Complementary to 2SC2859-HF. ● Pb−Free Package May be Available. The G� |
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2SB1182 | ROHM Semiconductor |
Medium power Transistor Medium power transistor (32V, 2A)
2SB1182 / 2SB1240
Features 1) Low VCE(sat).
VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2) Complements 2SD1758 / 2SD1862.
Structure Epitaxial planar type PNP silicon transistor
Dimensions (Unit : mm)
2SB1182
6.5±0.2 5.1 |
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2SB1182 | Inchange Semiconductor |
Silicon PNP Power Transistor isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2SB1182
DESCRIPTION ·Small and slim package ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Power dissipation
ABSOLUTE MAXIMUM RATINGS(Ta=25� |
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Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |